AS7C31024B-15TJCN Alliance Memory, AS7C31024B-15TJCN Datasheet - Page 5

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AS7C31024B-15TJCN

Manufacturer Part Number
AS7C31024B-15TJCN
Description
SRAM 1M, 3.3V, 15ns, FAST 128K x 8 Asynch SRAM
Manufacturer
Alliance Memory
Datasheet

Specifications of AS7C31024B-15TJCN

Rohs
yes
Memory Size
128 KB
Organization
128 K x 8
Access Time
15 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
3 V
Maximum Operating Current
60 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
SOJ-32
Factory Pack Quantity
22
Write cycle (over the operating range)
Write waveform 1 (WE controlled)
Write cycle time
Chip enable (CE1) to write end
Chip enable (CE2) to write end
Address setup to write end
Address setup time
Write pulse width
Write recovery time
Address hold from end of write
Data valid to write end
Data hold time
Write enable to output in high Z
Output active from write end
Address
3/24/04, v.1.2
D
OUT
WE
D
IN
Parameter
t
AS
Symbol
t
t
10,11,12
Alliance Semiconductor
t
t
t
t
t
t
t
t
CW1
CW2
t
t
t
WZ
WC
AW
WR
DW
OW
WP
AH
DH
WZ
AS
11, 12
t
AW
t
WC
Min Max Min Max Min Max Min Max
10
8
8
8
0
7
0
0
5
0
1
t
WP
-10
5
t
Data valid
DW
®
12
9
9
9
0
8
0
0
6
0
1
-12
t
6
OW
t
15
10
10
10
t
t
WR
0
9
0
0
8
0
1
AH
DH
-15
7
20
12
12
12
12
10
0
0
0
0
1
-20
AS7C31024B
8
Unit Notes
P. 5 of 9
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4, 5
4, 5
4, 5
12
12
12

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