NCP4547IMNTWG ON Semiconductor, NCP4547IMNTWG Datasheet - Page 4

no-image

NCP4547IMNTWG

Manufacturer Part Number
NCP4547IMNTWG
Description
Power Switch ICs - Power Distribution BDS2 MCM PACKAGED
Manufacturer
ON Semiconductor
Datasheet
6. Average current from V
7. Average current from V
8. Average current from V
9. See below figure for Test Circuit and Timing Diagrams.
ELECTRICAL CHARACTERISTICS
MOSFET
CONTROLLER
SWITCHING CHARACTERISTICS
V
V
On−Resistance
Leakage Current (Note 6)
Supply Standby Current (Note 7)
Supply Dynamic Current (Note 8)
Bleed Resistance
Input High Voltage − EN & POL
Input Low Voltage − EN & POL
Pull Down Resistance − EN
Pull Up Resistance − POL
Output Slew Rate
Output Turn−on Delay
Output Turn−off Delay
Output Slew Rate
Output Turn−on Delay
Output Turn−off Delay
CC
CC
= 5.0 V, V
= 3.3 V, V
Parameter
IN
IN
Parameter
= 1.8 V
= 5.0 V
IN
CC
CC
to V
V
to GND with MOSFET turned off.
to GND after charge up time of MOSFET.
V
EN
OUT
T
OUT
ON
with MOSFET turned off.
50%
OFF ON
(T
(T
J
Figure 3. Test Circuit and Timing Diagrams
J
= 25°C unless otherwise specified, Note 9)
= 25°C unless otherwise specified)
10%
V
V
EN
EN
R
R
R
R
R
R
L
L
L
L
L
L
V
V
V
V
= 0 V; V
Test Conditions
= 0V; V
CC
CC
CC
CC
= 10 W, C
= 10 W, C
= 10 W, C
= 10 W, C
= 10 W, C
= 10 W, C
V
Test Conditions
EN
= 5.0 V; V
= 5.0 V; V
= 3.3 V; V
= 3.3 V; V
50%
http://onsemi.com
T
V
V
POL
EN
= V
OFF
90%
POL
IN
CC
POL
L
L
L
L
L
L
POL
= V
= 0.1 mF
= 0.1 mF
= 0.1 mF
= 0.1 mF
= 0.1 mF
= 0.1 mF
= V
IN
IN
IN
IN
NCP4547
CC
= V
4
= 1.8 V
= 5.0 V
= 1.8 V
= 5.0 V
CC
GND
; V
CC
= 5.5 V
IN
= 6 V
BLEED
V
DELAY
OUT
V
OUT
SR
Symbol
Symbol
R
SR =
I
I
T
T
R
I
BLEED
LEAK
STBY
R
R
T
T
DYN
V
V
SR
SR
OFF
OFF
Dt
10%
ON
ON
ON
PD
PU
IH
IL
R
90%
L
DV
Dt
Min
Min
DV
2.0
50
40
40
C
L
1300
0.03
Typ
Typ
250
100
100
100
600
4.7
4.9
5.1
5.7
5.0
8.2
2.5
4.3
1.1
Max
Max
500
200
180
180
6.1
6.3
6.5
7.1
1.0
0.8
15
Unit
Unit
kV/s
kV/s
mW
kW
kW
mA
mA
mA
ms
ms
ms
ms
W
V
V

Related parts for NCP4547IMNTWG