NCP337FCT2G ON Semiconductor, NCP337FCT2G Datasheet - Page 7

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NCP337FCT2G

Manufacturer Part Number
NCP337FCT2G
Description
Power Switch ICs - Power Distribution
Manufacturer
ON Semiconductor
Datasheet

Specifications of NCP337FCT2G

On Resistance (max)
120 mOhms
On Time (max)
1130 us
Operating Supply Voltage
1.2 V to 5.5 V
Supply Current (max)
3 A
Mounting Style
SMD/SMT
Package / Case
WLCSP-6
Maximum Power Dissipation
0.66 W

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NCP337FCT2G
Manufacturer:
ON Semiconductor
Quantity:
1 900
Company:
Part Number:
NCP337FCT2G
Quantity:
2 300
Overview
distribution switch designed to isolate ICs connected on the
battery in order to save energy. The part can be turned on,
with a wide range of battery from 1.2 V to 5.5 V.
Enable Input
pin is tied low (disable), forcing P MOS switch off.
1.2 V and EN forced to high level.
The NCP337 is a high side P channel MOSFET power
Enable pin is an active high. The path is opened when EN
The IN/OUT path is activated with a minimum of Vin of
Figure 12. Enable Time and Rise Time
Figure 13. Disable Time and Fall Time
FUNCTIONAL DESCRIPTION
http://onsemi.com
7
Auto Discharge
in order to discharge the application capacitor connected on
OUT pin.
level (disable state).
long as EN pin is set at low level and Vin > 1.2 V.
Nmosfet, the typical value is set at 70 W.
Cin and Cout Capacitors
close as possible the part to for stability improvement.
NMOS FET is placed between the output pin and GND,
The auto−discharge is activated when EN pin is set to low
The discharge path (Pull down NMOS) stays activated as
In order to limit the current across the internal discharge
IN and OUT, 1 mF, at least, capacitors must be placed as

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