MD7IC2251GNR1 Freescale Semiconductor, MD7IC2251GNR1 Datasheet - Page 2

• Manufacturer Part Number: MD7IC2251GNR1
• Description: Power Amplifiers HV7IC 2100MHZ
• Manufacturer: Freescale Semiconductor

Specifications of MD7IC2251GNR1

• Rohs: yes
• Package / Case: TO-270 Gull
• Operating Supply Voltage: 26 V to 32 V
• Bandwidth: 2110 MHz to 2170 MHz
• Input Voltage Range (max): 32 V
• Number Of Channels: 1

2
MD7IC2251NR1 MD7IC2251GNR1
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Final Doherty Application
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Stage 1 - - Off Characteristics
Stage 1 - - On Characteristics
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
Thermal Resistance, Junction to Case
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Per JESD22--A113, IPC/JEDEC J--STD--020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
4. Each side of device measured separately.
Case Temperature 78°C, P
Case Temperature 89°C, P
(V
(V
(V
(V
(V
(V
calculators by product.
Select Documentation/Application Notes -- AN1955.
DS
DS
GS
DS
DS
DD
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 65 Vdc, V
= 28 Vdc, V
= 1.5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
D
DQ1(A+B)
DQ1(A+B)
GS
GS
DS
= 23 μAdc)
= 0 Vdc)
= 0 Vdc)
DQ1(A+B)
DQ2A
DQ1(A+B)
DQ2A
= 0 Vdc)
= 80 mAdc)
= 80 mAdc, Measured in Functional Test)
= 260 mA, V
= 260 mA, V
Test Methodology
out
out
(4)
(4)
Characteristic
= 80 mA
= 80 mA
= 12 W CW
= 50 W CW
(1,2)
Test Methodology
Characteristic
(T
GS2B
GS2B
Rating
A
= 25°C unless otherwise noted)
= 1.4 Vdc
= 1.4 Vdc
Symbol
V
V
V
Rating
I
I
I
GS(th)
GG(Q)
GS(Q)
GSS
DSS
DSS
3
Package Peak Temperature
Min
Symbol
Symbol
1.2
6.0
—
—
—
—
R
V
V
V
T
T
P
T
θJC
DS
GS
DD
stg
C
in
J
Freescale Semiconductor, Inc.
Typ
260
2.0
2.7
7.0
—
—
—
-- 65 to +150
Value
--0.5, +65
--0.5, +10
32, +0
Class
Value
150
225
4.8
1.5
3.7
1.0
1A
28
A
II
(2,3)
Max
2.7
8.0
10
—
1
1
RF Device Data
(continued)
°C/W
dBm
Unit
Unit
Unit
μAdc
μAdc
μAdc
Vdc
Vdc
Vdc
Unit
Vdc
Vdc
Vdc
°C
°C
°C
°C