74AUP1G17GM-G NXP Semiconductors, 74AUP1G17GM-G Datasheet
74AUP1G17GM-G
Specifications of 74AUP1G17GM-G
Related parts for 74AUP1G17GM-G
74AUP1G17GM-G Summary of contents
Page 1
Low-power Schmitt trigger Rev. 7 — 16 July 2012 1. General description The 74AUP1G17 provides the single Schmitt trigger buffer capable of transforming slowly changing input signals into sharply defined, jitter-free output signals. This device ensures a ...
Page 2
... Marking Table 2. Marking Type number 74AUP1G17GW 74AUP1G17GM 74AUP1G17GF 74AUP1G17GN 74AUP1G17GS 74AUP1G17GS [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 5. Functional diagram A 2 Fig 1. ...
Page 3
... NXP Semiconductors 6. Pinning information 6.1 Pinning 74AUP1G17 1 n. GND 3 001aaf170 Fig 4. Pin configuration SOT353-1 74AUP1G17 n. GND 3 Transparent top view Fig 6. Pin configuration SOT891, SOT1115 and SOT1202 6.2 Pin description Table 3. Pin description Symbol Pin TSSOP5 and X2SON5 n. GND n. ...
Page 4
... NXP Semiconductors 7. Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level. 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC I input clamping current ...
Page 5
... NXP Semiconductors 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter = 25 C T amb V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I power-off leakage current OFF I additional power-off leakage OFF ...
Page 6
... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V LOW-level output voltage OL I input leakage current I I power-off leakage current OFF I additional power-off leakage OFF current I supply current CC I additional supply current CC = 40 C to +125 C ...
Page 7
... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I additional power-off leakage OFF current I supply current CC I additional supply current CC 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see ...
Page 8
... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay see pF and power dissipation MHz capacitance ...
Page 9
... NXP Semiconductors 12. Waveforms Measurement points are given in Logic levels: V and Fig 8. The data input (A) to output (Y) propagation delays Table 9. Measurement points Supply voltage Output 0.5 3.6 V Test data is given in Table Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance. ...
Page 10
... NXP Semiconductors 13. Transfer characteristics Table 11. Transfer characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter = 25 C T amb V positive-going T+ threshold voltage V negative-going T threshold voltage V hysteresis voltage H = 40 C to +85 C T amb V positive-going T+ threshold voltage V negative-going T threshold voltage 74AUP1G17 Product data sheet ...
Page 11
... NXP Semiconductors Table 11. Transfer characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter V hysteresis voltage H = 40 C to +125 C T amb V positive-going T+ threshold voltage V negative-going T threshold voltage V hysteresis voltage H 74AUP1G17 Product data sheet …continued Conditions see Figure 10, Figure 11, Figure 12 and Figure ...
Page 12
... NXP Semiconductors 14. Waveforms transfer characteristics T− Fig 10. Transfer characteristic Fig 12. Typical transfer characteristics; V 74AUP1G17 Product data sheet mnb154 Fig 11. Definition of V 240 I CC (μA) 160 0.4 0.8 1 All information provided in this document is subject to legal disclaimers. Rev. 7 — 16 July 2012 ...
Page 13
... NXP Semiconductors Fig 13. Typical transfer characteristics; V 15. Application information The slow input rise and fall times cause additional power dissipation, this can be calculated using the following formula additional power dissipation (W input frequency (MHz input rise time (ns ...
Page 14
... NXP Semiconductors (1) Positive-going edge. (2) Negative-going edge. Linear change of V between 0.8 V and 2.0 V. All values given are typical, unless otherwise specified. I Fig 14. Average function 74AUP1G17 Product data sheet 0.3 ΔI CC(AV) (mA) 0.2 0.1 0 0.8 1.8 2.8 CC All information provided in this document is subject to legal disclaimers. Rev. 7 — 16 July 2012 ...
Page 15
... NXP Semiconductors 16. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. 0.1 1.0 mm 1.1 0.15 0 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE ...
Page 16
... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. (2) terminal 1 index area Dimensions (mm are the original dimensions) (1) Unit max 0.5 0.04 0.25 1.50 mm nom 0.20 1.45 min 0.17 1.40 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. Outline version ...
Page 17
... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 6× (1) terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max max 0.20 1.05 mm 0.5 0.04 0.12 0.95 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION IEC SOT891 Fig 17. Package outline SOT891 (XSON6) ...
Page 18
... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 0.9 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 0.95 mm nom 0.15 0.90 min 0.12 0.85 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1115 Fig 18. Package outline SOT1115 (XSON6) ...
Page 19
... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 1.0 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.05 mm nom 0.15 1.00 min 0.12 0.95 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1202 Fig 19. Package outline SOT1202 (XSON6) ...
Page 20
... NXP Semiconductors X2SON5: plastic thermal enhanced extremely thin small outline package; no leads; 5 terminals; body 0.8 x 0 terminal 1 index area e 1 terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.128 0.85 mm nom 0.80 min 0.040 0.75 Note 1. Dimension A is including plating thickness. 2. Plastic or metal protrusions of 0.075 mm maximum per side are not included. ...
Page 21
... NXP Semiconductors 17. Abbreviations Table 12. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 18. Revision history Table 13. Revision history Document ID Release date 74AUP1G17 v.7 20120716 • Modifications: Package outline drawing of SOT1226 74AUP1G17 v.6 20120412 • ...
Page 22
... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
Page 23
... Product data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
Page 24
... NXP Semiconductors 21. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 4 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 13 Transfer characteristics ...