74AUP1G07GM-H NXP Semiconductors, 74AUP1G07GM-H Datasheet

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74AUP1G07GM-H

Manufacturer Part Number
74AUP1G07GM-H
Description
Buffers & Line Drivers 1.8V SGL LP BUF OPEN-DRAIN OTPT
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 74AUP1G07GM-H

Product Category
Buffers & Line Drivers
Rohs
yes
Number Of Input Lines
1
Number Of Output Lines
1
Polarity
Non-Inverting
Supply Voltage - Max
3.6 V
Supply Voltage - Min
0.8 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
XSON-6
Logic Family
AUP
Logic Type
CMOS
Low Level Output Current
4 mA
Minimum Operating Temperature
- 40 C
Number Of Channels Per Chip
1
Output Type
Open Drain
Propagation Delay Time
15.6 ns at 1.1 V to 1.3 V
Factory Pack Quantity
5000
Part # Aliases
74AUP1G07GM,132
1. General description
2. Features and benefits
The 74AUP1G07 provides the single non-inverting buffer with open-drain output. The
output of the device is an open drain and can be connected to other open-drain outputs to
implement active-LOW wired-OR or active-HIGH wired-AND functions.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
This device ensures a very low static and dynamic power consumption across the entire
V
This device is fully specified for partial power-down applications using I
The I
the device when it is powered down.
CC
74AUP1G07
Low-power buffer with open-drain output
Rev. 7 — 16 July 2012
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
ESD protection:
Low static power consumption; I
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
I
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C
OFF
range from 0.8 V to 3.6 V.
OFF
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
HBM JESD22-A114F Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
circuitry provides partial Power-down mode operation
circuitry disables the output, preventing the damaging backflow current through
CC
range from 0.8 V to 3.6 V.
CC
= 0.9 A (maximum)
CC
Product data sheet
OFF
.

Related parts for 74AUP1G07GM-H

74AUP1G07GM-H Summary of contents

Page 1

Low-power buffer with open-drain output Rev. 7 — 16 July 2012 1. General description The 74AUP1G07 provides the single non-inverting buffer with open-drain output. The output of the device is an open drain and can be connected to other ...

Page 2

... Marking Table 2. Marking Type number 74AUP1G07GW 74AUP1G07GM 74AUP1G07GF 74AUP1G07GN 74AUP1G07GS 74AUP1G07GX [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 5. Functional diagram ...

Page 3

... NXP Semiconductors 6. Pinning information 6.1 Pinning 74AUP1G07 1 n. GND 3 001aaf412 Fig 4. Pin configuration SOT353-1 74AUP1G07 n. GND 3 Transparent top view Fig 6. Pin configuration SOT891, SOT1115 and SOT1202 6.2 Pin description Table 3. Pin description Symbol Pin TSSOP5 and X2SON5 n. GND n. ...

Page 4

... NXP Semiconductors 7. Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level high-impedance OFF state. 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter ...

Page 5

... NXP Semiconductors 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter = 25 C T amb V HIGH-level input voltage IH V LOW-level input voltage IL V LOW-level output voltage OL I input leakage current I I OFF-state output current OZ I power-off leakage current OFF  ...

Page 6

... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V LOW-level output voltage OL I input leakage current I I OFF-state output current OZ I power-off leakage current OFF I additional power-off OFF leakage current I supply current CC I ...

Page 7

... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I additional power-off OFF leakage current I supply current CC I additional supply current CC 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see ...

Page 8

... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay see pF and power dissipation MHz capacitance ...

Page 9

... NXP Semiconductors 12. Waveforms A input Y output Measurement points are given in Logic level the typical output voltage level that occurs with the output load. OL Fig 8. The data input (A) to output (Y) propagation delays Table 9. Measurement points Supply voltage 1 2 3.6 V ...

Page 10

... NXP Semiconductors 13. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. 0.1 1.0 mm 1.1 0.15 0 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE ...

Page 11

... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. (2) terminal 1 index area Dimensions (mm are the original dimensions) (1) Unit max 0.5 0.04 0.25 1.50 mm nom 0.20 1.45 min 0.17 1.40 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. Outline version ...

Page 12

... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 6× (1) terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max max 0.20 1.05 mm 0.5 0.04 0.12 0.95 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION IEC SOT891 Fig 12. Package outline SOT891 (XSON6) ...

Page 13

... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 0.9 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 0.95 mm nom 0.15 0.90 min 0.12 0.85 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1115 Fig 13. Package outline SOT1115 (XSON6) ...

Page 14

... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 1.0 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.05 mm nom 0.15 1.00 min 0.12 0.95 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version IEC SOT1202 Fig 14. Package outline SOT1202 (XSON6) ...

Page 15

... NXP Semiconductors X2SON5: plastic thermal enhanced extremely thin small outline package; no leads; 5 terminals; body 0.8 x 0 terminal 1 index area e 1 terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.128 0.85 mm nom 0.80 min 0.040 0.75 Note 1. Dimension A is including plating thickness. 2. Plastic or metal protrusions of 0.075 mm maximum per side are not included. ...

Page 16

... NXP Semiconductors 14. Abbreviations Table 11. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 15. Revision history Table 12. Revision history Document ID Release date 74AUP1G07 v.7 20120716 • Modifications: Package outline drawing of SOT1226 74AUP1G07 v.6 20120412 • ...

Page 17

... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 18

... Product data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 19

... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 4 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 13 Package outline ...

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