MAX4239AUT-T Maxim Integrated, MAX4239AUT-T Datasheet - Page 2

• Manufacturer Part Number: MAX4239AUT-T
• Description: Precision Amplifiers Low Offset/Drift Precision
• Manufacturer: Maxim Integrated

Specifications of MAX4239AUT-T

• Input Offset Voltage: 0.002 mV at 5.5 V
• Package / Case: SOT-23
• Gain Bandwidth Product: 6.5 MHz
• Maximum Operating Temperature: + 125 C
• Maximum Power Dissipation: 727 mW
• Minimum Operating Temperature: - 40 C
• Operating Supply Voltage: 3 V, 5 V
• Supply Current: 0.85 mA at 5.5 V
• Supply Voltage - Max: 5.5 V
• Supply Voltage - Min: 2.7 V

ABSOLUTE MAXIMUM RATINGS
Power-Supply Voltage (V
All Other Pins ................................(V
Output Short-Circuit Duration
Continuous Power Dissipation (T
Ultra-Low Offset/Drift, Low-Noise,
Precision SOT23 Amplifiers
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(2.7V ≤ V
unless otherwise noted.)
2
Input Offset Voltage
Long-Term Offset Drift
Input Bias Current
Input Offset Current
Peak-to-Peak Input Noise
Voltage
Input Voltage-Noise Density
Common-Mode Input
Voltage Range
Common-Mode Rejection Ratio
Power-Supply Rejection Ratio
Large-Signal Voltage Gain
Output Voltage Swing
Output Short-Circuit Current
Output Leakage Current
Slew Rate
Gain-Bandwidth Product
Minimum Stable Closed-Loop
Gain
(OUT shorted to V
6-Pin Plastic SOT23
8-Pin Plastic SO (derate 5.88mW/°C above +70°C) ....471mW
6-Pin TDFN-EP (derate 18.2mW above +70°C) .........1454mW
(derate 9.1mW/°C above +70°C) ...............................727mW
_______________________________________________________________________________________
PARAMETER
CC
≤ 5.5V, V
CC
or GND) ...............................Continuous
CC
CM
to GND).......................................6V
= V
A
GND
= +70°C)
GND
SYMBOL
V
CMRR
GBWP
PSRR
OH
e
A
= 0V, V
V
V
I
nP-P
- 0.3V) to (V
VOL
OS
e
I
CM
OS
B
/V
n
OL
OUT
(Note 1)
(Note 2)
(Note 2)
R
f = 1kHz
Inferred from CMRR test
-0.1V
2.7V
0.05V V
(Note 1)
0.1V
(Note 1)
R
R
To either supply
0
V
V
R
measured at f = 100kHz
R
phase margin = 60°
CC
OUT
S
L
L
L
L
CC
= 10k
= 1k
= 10k , C
= 10k , C
= 100 , 0.01Hz to 10Hz
V
= V
= 5V, C
OUT
= 2V step
+ 0.3V)
V
V
V
CC
CC
OUT
CM
OUT
/2, R
V
L
CC
5.5V (Note 1)
= 100pF,
L
L
V
V
V
CONDITIONS
,
CC
= 100pF,
= 100pF,
CC
CC
L
- 1.3V (Note 1)
= 10kΩ connected to V
- 0.05V
- 0.1V
Operating Temperature Range .........................-40°C to +125°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow)
Lead(Pb)-Free Packages.............................................+260°C
Packages Containing Lead..........................................+240°C
= GND (Note 2)
R
R
V
V
V
V
MAX4238
MAX4239
MAX4238
MAX4239
MAX4238
MAX4239
CC
CC
L
L
OL
OL
= 10k
= 1k
- V
- V
OH
OH
V
CC
- 0.1
MIN
120
120
125
125
GND
/2, SHDN = V
TYP
0.01
0.35
140
140
150
145
0.1
1.5
1.6
6.5
50
30
35
35
40
10
1
2
4
4
1
1
MAX
- 1.3
V
CC
10
10
50
50
2
CC
1
, T
A
nV/1000hr
NV/
= +25
UNITS
µV
MHz
V/µs
mA
mV
V/V
pA
pA
dB
dB
dB
µA
µV
V
P-P
°
C,