AP-CF004GE3FR-NDNRJ Apacer, AP-CF004GE3FR-NDNRJ Datasheet - Page 11
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AP-CF004GE3FR-NDNRJ
Manufacturer Part Number
AP-CF004GE3FR-NDNRJ
Description
Memory Cards CFC 3 STD 4GB IND COMPACT FLASH CARD
Manufacturer
Apacer
Datasheet
1.AP-CF008GE3FR-ETNRJ.pdf
(69 pages)
Specifications of AP-CF004GE3FR-NDNRJ
Rohs
yes
Product
Compact Flash
Memory Size
4 GB
Operating Supply Voltage
3.3 V, 5 V
Maximum Operating Temperature
+ 70 C
Dimensions
42.8 mm x 36.4 mm x 3.3 mm
Minimum Operating Temperature
0 C
5.1 Intelligent Endurance Design
5.1.1 Advanced wear-leveling algorithms
The NAND flash devices are limited by a certain number of write cycles. When using a file system,
frequent file table updates is mandatory. If some area on the flash wears out faster than others, it would
significantly reduce the lifetime of the whole device, even if the erase counts of others are far from the
write cycle limit. Thus, if the write cycles can be distributed evenly across the media, the lifetime of the
media can be prolonged significantly. The scheme is achieved both via buffer management and Apacer-
specific advanced wear leveling to ensure that the lifetime of the flash media can be increased, and the
disk access performance is optimized as well.
5.1.2 S.M.A.R.T. Technology
S.M.A.R.T. is an acronym for Self-Monitoring, Analysis and Reporting Technology, an open standard
allowing disk drives to automatically monitor their own health and report potential problems. It protects the
user from unscheduled downtime by monitoring and storing critical drive performance and calibration
parameters. Ideally, this should allow taking proactive actions to prevent impending drive failure. Apacer
SMART feature adopts the standard SMART command B0h to read data from the drive. When the Apacer
SMART Utility running on the host, it analyzes and reports the disk status to the host before the device is
in critical condition.
5.1.3 Built-in Hardware ECC
The ATA-Disk Module uses BCH Error Detection Code (EDC) and Error Correction Code (ECC)
algorithms which correct up to eight random single-bit errors for each 512-byte block of data. High
performance is fulfilled through hardware-based error detection and correction.
5.1.4 Enhanced Data Integrity
The properties of NAND flash memory make it ideal for applications that require high integrity while
operating in challenging environments. The integrity of data to NAND flash memory is generally
maintained through ECC algorithms and bad block management. Flash controllers can support up to 8
bits ECC capability for accuracy of data transactions, and bad block management is a preventive
mechanism from loss of data by retiring unusable media blocks and relocating the data to the other blocks,
along with the integration of advanced wear leveling algorithms, so that the lifespan of device can be
expanded.
© 2009 Apacer Technology Inc.
Value Added
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AP-CFxxxxE3XR-XXXXJ
Compact Flash Ⅲ Ⅲ Ⅲ Ⅲ series
10
Rev. 1.6