BD70HC5WEFJ-E2 ROHM Semiconductor, BD70HC5WEFJ-E2 Datasheet - Page 17

• Manufacturer Part Number: BD70HC5WEFJ-E2
• Description: Low Dropout Controllers - LDO LDO Reg Pos 7.0V 1.5A
• Manufacturer: ROHM Semiconductor

Specifications of BD70HC5WEFJ-E2

• Rohs: yes
• Input Voltage Max: 8 V
• Output Voltage: 7 V
• Output Current: 1.5 A
• Output Type: Fixed
• Number Of Outputs: 1
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: HTSOP-8
• Input Voltage Min: 4.5 V
• Maximum Power Dissipation: 2110 mW
• Minimum Operating Temperature: - 25 C

Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
TSZ22111･15･001
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
BDxxHC5WEFJ
(11). Regarding input pin of the IC
(12). Ground Wiring Pattern.
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic
diode or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC.
The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical
damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the
GND (P substrate) voltage to an input pin, should not be used.
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to
change the GND wiring pattern of any external components, either.
Parasitic element
Pin A
N
P
+
N
GND
P
P substrate
P
+
Resistor
N
Pin A
Parasitic
element
17/19
Parasitic element
Pin B
N
P
+
C
B
N
E
GND
P
P substrate
Transistor (NPN)
P
+
N
GND
TSZ02201-0R6R0A600210-1-2
25.July.2012 Rev.001
Other adjacent elements
Pin B
B
Datasheet
C
E
GND
Parasitic
element