BD33GC0WEFJ-E2 ROHM Semiconductor, BD33GC0WEFJ-E2 Datasheet - Page 12

• Manufacturer Part Number: BD33GC0WEFJ-E2
• Description: Low Dropout Controllers - LDO LDO Reg Pos 3.3V 1A
• Manufacturer: ROHM Semiconductor

Specifications of BD33GC0WEFJ-E2

• Rohs: yes
• Input Voltage Max: 14 V
• Output Voltage: 3.3 V
• Output Current: 1 A
• Output Type: Fixed
• Number Of Outputs: 1
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: HTSOP-8
• Input Voltage Min: 4.5 V
• Maximum Power Dissipation: 2110 mW
• Minimum Operating Temperature: - 25 C

●Power Dissipation
TSZ22111･15･001
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BDxxGC0WEFJ
Thermal design should allow operation within the following conditions. Note that the temperatures listed are the allowed
temperature limits, and thermal design should allow sufficient margin from the limits.
Chip junction temperature can be determined as follows:
◎HTSOP-J8
1.0
3.0
2.0
4.0
1. Ambient temperature Ta can be no higher than 85℃.
2. Chip junction temperature (Tj) can be no higher than 150℃.
Most of the heat loss that occurs in the BDxxGC0WEFJ is generated from the output Pch FET. Power loss is determined
by the total V
current conditions in relation to the heat dissipation characteristics of the V
heat dissipation may vary substantially depending on the substrate employed (due to the power package incorporated in
the BDxxGC0WEFJ make certain to factor conditions such as substrate size into the thermal design.
0
Calculation based on ambient temperature (Ta)
0
Tj=Ta+θj-a×W
⑤3.76W
④2.11W
③1.10W
②0.82W
①0.50W
＜Reference values＞
Example) Where V
Power consumption [W] = Input voltage (V
Power consumption [W] = 5.0 V - 3.3V ×0.1A
25
CC
-V
O
θj-a: HTSOP-J8 153.2℃/W
Ambient Temperature :Ta [℃]
voltage and output current. Be sure to confirm the system input and output voltage and the output
50
=0.17[W]
CC
周囲温度:Ta [℃]
=5.0V, V
75
O
113.6℃/W
Substrate size: 70mm×70mm×1.6mm (substrate with thermal via)
59.2℃/W
33.3℃/W
=3.3V, I
100
O
(Ave) = 0.1A,
1-layer substrate (copper foil density 0mm×0mm)
2-layer substrate (copper foil density 15mm×15mm)
2-layer substrate (copper foil density 70mm×70mm)
125
4-layer substrate (copper foil density 70mm×70mm)
CC
12/19
) - Output voltage (V
150
Measure condition: mounted on a ROHM board, and IC
Substrate size: 70mm × 70mm × 1.6mm
・Solder the substrate and package reverse exposure
① IC only
② 1-layer（copper foil are :0mm×0mm）
③ 2-layer（copper foil are :15mm×15mm）
④ 2-layer（copper foil are :70mm×70mm）
⑤ 4-layer（copper foil are :70mm×70mm）
heat radiation part
θj-a=249.5℃/W
θj-a=153.2℃/W
θj-a=113.6℃/W
θj-a=59.2℃/W
θj-a=33.3℃/W
CC
O
) ×I
and V
(Substrate with thermal via)
O
(Ave)
O
in the design. Bearing in mind that
TSZ02201-0R6R0A600200-1-2
25.July.2012 Rev.001
Datasheet