STM8L152M8T7 STMicroelectronics, STM8L152M8T7 Datasheet - Page 93

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STM8L152M8T7

Manufacturer Part Number
STM8L152M8T7
Description
8-bit Microcontrollers - MCU 8-bit Ultralow MCU LCD 80pin 64kb Flash
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM8L152M8T7

Product Category
8-bit Microcontrollers - MCU
Rohs
yes
Core
STM8
Data Bus Width
8 bit

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Part Number:
STM8L152M8T7
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STM8L15xx8, STM8L15xR6
Table 36.
1. Data based on characterization results, not tested in production.
2. Conforming to JEDEC JESD22a117
3. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation
4. Data based on characterization performed on the whole data memory.
Symbol
N
t
RET
V
t
I
RW
prog
prog
addresses a single byte.
DD
(2)
(3)
Operating voltage
(all modes, read/write/erase)
Programming time for 1 or 128 bytes (block)
erase/write cycles (on programmed byte)
Programming time for 1 to 128 bytes (block)
write cycles (on erased byte)
Programming/ erasing consumption
Data retention (program memory) after 10000
erase/write cycles at T
(6 suffix)
Data retention (program memory) after 10000
erase/write cycles at T
(3 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(6 suffix)
Data retention (data memory) after 300000
erase/write cycles at T
(3 suffix)
Erase/write cycles (program memory)
Erase/write cycles (data memory)
Flash program and data EEPROM memory
Flash memory
Parameter
A
A
A
A
=− 40 τ ο +85 °C
=− 40 τ ο +125 °C
=− 40 τ ο +85 °C
=− 40 τ ο +125 °C
Doc ID 17943 Rev 5
T
T
A
A
=+25 °C, V
=+25 °C, V
T
T
f
T
SYSCLK
A
A
A
T
T
=− 40 τ ο +105 °C
=− 40 τ ο +125 °C
T
T
=− 40 τ ο +85 °C
RET
RET
Conditions
(7 suffix) or
RET
RET
(6 suffix),
(3 suffix)
=+125 °C
=+125 °C
=+85 °C
=+85 °C
= 16 MHz
DD
DD
= 3.0 V
= 1.8 V
300
30
30
10
Min.
1.65
5
5
(4)
(1)
(1)
(1)
(1)
(1)
(1)
Electrical parameters
Typ.
0.7
6
3
Max.
3.6
(1)
kcycles
years
Unit
93/129
mA
ms
ms
V

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