FT200XD-R FTDI, FT200XD-R Datasheet - Page 34

no-image

FT200XD-R

Manufacturer Part Number
FT200XD-R
Description
USB Interface IC USB to I2C IC DFN-10
Manufacturer
FTDI
Datasheet

Specifications of FT200XD-R

Rohs
yes
Product
USB 2.0
Data Rate
12 Mbps, 480 Mbps
Interface Type
I2C, USB
Operating Supply Voltage
2.97 V to 5.5 V
Operating Supply Current
6.8 mA to 9.1 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
DFN-10
Tradename
X-Chip
These values can have a significant effect on the behaviour of the device. Steps must be taken to ensure
that these locations are not written to un-intentionally by an application which is intended to access only
the user area.
This area is included in a checksum which covers configuration areas of the memory, and so changing
any value can also cause this checksum to fail.
Configuration Memory Area (non-writable)
This is a reserved area and the application should not write to this area of memory. Any attempt to write
these locations will fail.
10.4 Hardware Requirements
The hardware is the same as for a typical USB-I
programming voltages are required. The I
USB connections, either a bus-powered configuration (see Section 7.1 and 7.3) or a self-powered
configuration (see Section 7.2) could be used.
10.5 Protocol
The I
For further details on the
10.5.1
This consists of a general call with a command phase followed by 2 data bytes which represent the MTP
memory address allowing users to address, potentially, up to 64K byte addresses.
10.5.2
This consists of a general call with a command phase followed by 1 data byte which shall be programmed
into the MTP memory at the address location set by the MTP memory address command.
10.5.3
This consists of a general call with a command phase followed by 1 data byte which is the data read from
the MTP memory at the address location set by the MTP memory address command.
10.5.4
When performing MTP memory write and read requests via the I
MTP address command along with 2 bytes representing the MTP memory address. The acknowledge
phase of this command represents the current status of the MTP memory (whether it is busy or not). If
the MTP memory is being accessed during an I
will NAK the master. The address will only be updated when the MTP memory is inactive.
Writing
The first part of the communication sets the address, and this is followed by the write command along
with the data to be written. The MTP memory write itself will be initiated when the FT200XD receives an
MTP memory write command followed by a single data byte. The ACK phase represents the current
activity of the MTP memory (whether it is busy or not busy). A successful write will only occur when both
status phases acknowledge the master indicating that the MTP memory can start the write. Users wishing
2
C MTP memory protocol consists of 3 commands:
Address MTP memory (0x10)
Write MTP memory (0x12)
Read MTP memory (0x14)
Address MTP memory (0x10)
Write MTP memory (0x12)
Read MTP memory (0x14)
Examples of Writing and Reading
Copyright © 2013 Future Technology Devices International Limited
I
2
C
protocol, refer to section 5.
2
C connections are the same as shown in Section 8.1. For the
2
C access then the respective command and data phases
2
C application and no additional hardware or
FT200XD USB I2C SLAVE IC Datasheet
Document No.: FT_000628 Clearance No.: FTDI# 265
2
C protocol, users must first issue the
Version 1.3
34

Related parts for FT200XD-R