MC9RS08KB12CFK Freescale Semiconductor, MC9RS08KB12CFK Datasheet - Page 33

• Manufacturer Part Number: MC9RS08KB12CFK
• Description: 8-bit Microcontrollers - MCU 8BIT 12K FLASH
• Manufacturer: Freescale Semiconductor

Specifications of MC9RS08KB12CFK

• Rohs: yes
• Core: RS08
• Processor Series: MC9RS08KB12
• Data Bus Width: 8 bit
• Maximum Clock Frequency: 20 MHz
• Program Memory Size: 12 KB
• Data Ram Size: 254 B
• On-chip Adc: Yes
• Operating Supply Voltage: 1.8 V to 5.5 V
• Operating Temperature Range: - 40 C to + 85 C
• Package/case: QFN-24
• Mounting Style: SMD/SMT

3.13
This section provides details about program/erase times and program-erase endurance for the flash
memory. For detailed information about program/erase operations, see the reference manual.
Freescale Semiconductor
1
2
1
2
3
C
D
Typical values assume V
only and are not tested in production.
Based on input pad leakage current. Refer to pad electricals.
No.
10
11
12
13
14
15
16
17
18
Typicals are measured at 25 °C.
t
programmed more than twice before next erase.
Fast V
and cause permanent damage to the pad. External filtering for the V
filter is shown in
1
2
3
4
5
6
7
8
9
hv
Input Leakage
Error
Characteristic
is the cumulative high voltage programming time to the same row before next erase. Same address can not be
Table 16. 10-Bit ADC Characteristics (V
PP
C
D
D
C
D
P
P
C
C
D
D
D
D
D
D
D
D
D
C
Flash Specifications
rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad
Supply voltage for program/erase
Program/Erase voltage
V
Program
Mass erase
Supply voltage for read operation
0 < f
Byte program time
Mass erase time
Cumulative program HV time
Total cumulative HV time
(total of t
HVEN to program setup time
PGM/MASS to HVEN setup time
HVEN hold time for PGM
HVEN hold time for MASS
V
HVEN to V
V
Recovery time
Program/erase endurance
T
Data retention
L
PP
PP
PP
to T
Figure
current
Bus
to PGM/MASS setup time
rise time
H
< 10 MHz
10-bit mode
8-bit mode
= –40 °C to 85 °C
me
DDAD
PP
35.
& t
3
hold time
Characteristic
hv
= 1.8 V, Temp = 25 °C, f
Conditions
applied to device)
MC9RS08KB12 Series MCU Data Sheet, Rev. 5
Table 17. Flash Characteristics
2
ADCK
REFH
Symb
E
= 1.0 MHz unless otherwise stated. Typical values are for reference
IL
= V
I
I
VPP_erase
Symbol
VPP_prog
t
V
hv_total
t
t
V
t
V
t
t
t
D_ret
t
nvh1
t
prog
t
t
t
DDAD
Read
t
pgs
nvs
nvh
vps
vph
—
me
vrs
rcv
hv
DD
PP
Min
—
—
, V
PP
REFL
power source is recommended. An example V
1000
11.8
Min
500
100
200
2.7
1.8
= V
Typ
20
10
20
20
15
—
—
—
—
±0.1
5
5
1
—
SSAD
1
, 1.8 V < V
Max
Typical
±1
—
12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Electrical Characteristics
LSB
Unit
DDAD
2
Max
12.2
200
100
5.5
5.5
40
—
—
—
—
—
—
—
—
—
—
—
< 2.7 V)
8
2
Pad leakage
Comment
R
cycles
AS
hours
years
Unit
ms
ms
μA
μA
μs
μs
μs
μs
μs
ns
ns
ns
μs
V
V
V
PP
2
*
33