MC100EPT26DR2G ON Semiconductor, MC100EPT26DR2G Datasheet - Page 4

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MC100EPT26DR2G

Manufacturer Part Number
MC100EPT26DR2G
Description
IC XLATOR LVPECL-LVTTL 8-SOIC
Manufacturer
ON Semiconductor
Series
100EPTr
Datasheet

Specifications of MC100EPT26DR2G

Logic Function
Translator
Number Of Bits
1
Input Type
LVPECL, LVDS
Output Type
LVTTL
Number Of Channels
1
Number Of Outputs/channel
1
Differential - Input:output
Yes/No
Propagation Delay (max)
1.8ns
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Supply Voltage
3 V ~ 3.6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data Rate
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC100EPT26DR2G
Manufacturer:
ON Semiconductor
Quantity:
3 900
Part Number:
MC100EPT26DR2G
Manufacturer:
ON
Quantity:
1 000
Part Number:
MC100EPT26DR2G
Manufacturer:
ON/安森美
Quantity:
20 000
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
5. Measured with a 750 mV 50% duty−cycle clock source. R
6. Reference (V
7. Skews are measured between outputs under identical transitions.
Table 5. TTL OUTPUT DC CHARACTERISTICS
Table 6. AC CHARACTERISTICS
Symbol
Symbol
V
V
I
I
I
f
t
t
t
t
t
t
V
t
t
CCH
CCL
OS
max
PLH
PHL
SK+ +
SK−−
SKPP
JITTER
r
f
OH
OL
PP
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Output HIGH Voltage
Output LOW Voltage
Power Supply Current
Power Supply Current
Output Short Circuit Current
Maximum Frequency (Figure 2)
Propagation Delay to
Output Differential (Note 6)
Within Device Skew++
Within Device Skew− −
Device−to−Device Skew (Note 7)
Random Clock Jitter (RMS) (Figure 2)
Input Voltage Swing (Differential Configuration)
Output Rise/Fall Times
(0.8V − 2.0V)
CC
= 3.3 V ± 5%; GND = 0 V)
Characteristic
Characteristic
3.0
2.0
1.0
0.0
0
V
Figure 2. Typical V
OL
V
 0.5 V
CC
@ v 200 MHz
@ > 200 MHz
= 3.0 V to 3.6 V; GND = 0.0 V (Note 5)
Q, Q
100
V
CC
http://onsemi.com
FREQUENCY (MHz)
OH
L
= 3.3 V; GND = 0.0 V; T
Min
275
150
330
1.2
1.2
= 500 W to GND and C
/ Jitter versus Frequency (255C)
I
I
OH
OL
JITTER
= 24 mA
= −3.0 mA
−40°C
4
Typ
350
100
800
600
1.5
1.5
15
20
20
6
V
Condition
OH
1200
Max
500
275
950
2.0
1.8
60
85
30
200
Min
275
150
330
1.2
1.2
L
A
= 20 pF to GND. Refer to Figure 3.
= −40°C to 85°C
25°C
Typ
350
100
800
600
1.5
1.5
15
20
40
6
Min
−50
2.4
10
15
1200
Max
500
275
950
2.0
1.8
60
85
30
300
12
8
4
0
Min
275
150
330
Typ
1.3
1.2
25
34
85°C
Typ
350
100
170
800
650
1.7
1.5
20
30
6
−150
Max
0.5
35
40
1200
Max
500
275
950
2.2
1.8
85
85
30
MHz
Unit
Unit
mA
mA
mA
mV
ns
ps
ps
ps
V
V

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