SST39SF512-70-4I-NHE Microchip Technology, SST39SF512-70-4I-NHE Datasheet - Page 8

• Manufacturer Part Number: SST39SF512-70-4I-NHE
• Description: Flash 64K X 8 70ns
• Manufacturer: Microchip Technology

Specifications of SST39SF512-70-4I-NHE

• Product Category: Flash
• Rohs: yes
• Memory Size: 512 Kbit
• Access Time: 70 ns
• Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: PLCC-32
• Organization: 64 KB x 8

Data Sheet
TABLE 5: DC O
TABLE 6: R
TABLE 7: C
TABLE 8: R
©2003 Silicon Storage Technology, Inc.
Symbol
I
I
I
I
I
V
V
V
V
Symbol
T
T
Parameter
C
C
Symbol
N
T
I
DD
SB1
SB2
LI
LO
LTH
PU-READ
PU-WRITE
DR
IL
IH
OL
OH
I/O
IN
END
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. N
1
1
1
1
(room temperature), and V
higher minimum specification.
1,2
END
1
1
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
Parameter
Power Supply Current
Read
Program and Erase
Standby V
(TTL input)
Standby V
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Description
I/O Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
ECOMMENDED
APACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
ELIABILITY
2
PERATING
DD
DD
Current
Current
C
HARACTERISTICS
DD
C
S
= 5V for SF devices. Not 100% tested.
YSTEM
HARACTERISTICS
P
OWER
Min
2.0
2.4
-
UP
V
T
DD
Minimum Specification
IMINGS
= 4.5-5.5V
Limits
Max
100 + I
0.8
0.4
30
50
50
10
8
3
1
10,000
100
DD
1
Units
mA
mA
µA
µA
µA
µA
V
V
V
V
512 Kbit Multi-Purpose Flash
Test Conditions
Address input=V
V
CE#=V
CE#=WE#=V
CE#=V
CE#=V
V
V
V
V
I
I
OL
OH
Cycles
DD
IN
OUT
DD
DD
Test Condition
Units
Years
=2.1 mA, V
=GND to V
=-400 µA, V
mA
=V
=V
=V
Minimum
=GND to V
V
V
I/O
DD
DD
DD
IN
IL
IH
DD
100
100
, OE#=WE#=V
, V
= 0V
= 0V
Max
Min
Max
-0.3V, V
DD
IL
=V
DD
DD
JEDEC Standard A117
JEDEC Standard A103
, OE#=V
DD
DD
JEDEC Standard 78
, V
=V
ILT
DD
=V
DD
, V
/V
DD
DD
Test Method
Max
=V
DD
IHT
DD
=V
SST39SF512
Min
S71149-05-000
DD
IH
IH
, at f=1/T
=V
Min
DD
, all I/Os open
Maximum
Max
DD
Max
12 pF
Units
6 pF
Max
µs
µs
RC
T5.6 1149
T6.1 1149
T7.0 1149
T8.2 1149
Min
11/03