SST39VF801C-70-4C-B3KE-T Microchip Technology, SST39VF801C-70-4C-B3KE-T Datasheet
SST39VF801C-70-4C-B3KE-T
Manufacturer Part Number
SST39VF801C-70-4C-B3KE-T
Description
Flash 2.7 to 3.6V 8Mbit Multi-Purpose Flash
Manufacturer
Microchip Technology
Datasheet
1.SST39VF801C-70-4I-EKE-T.pdf
(2 pages)
Specifications of SST39VF801C-70-4C-B3KE-T
Product Category
Flash
Rohs
yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SST39VF801C-70-4C-B3KE-T
Manufacturer:
Microchip Technology
Quantity:
10 000
What is SuperFlash?
SuperFlash is an innovative, highly reliable and
versatile type of NOR Flash memory invented by
Silicon Storage Technology (SST). SuperFlash
memory is much more fl exible and reliable than
competing non-volatile memories. This technology
utilizes a split-gate cell architecture which uses
a robust thick-oxide process that requires fewer
mask steps resulting in a lower-cost nonvolatile
memory solution with excellent data retention and
higher reliability.
SuperFlash Advantages
■
■
■
■
Parallel Flash
■
■
■
■
Serial Flash
■
■
■
■
■
SuperFlash® Memory Products
High Performance, Low Power Consumption and Superior Reliability
Fast, fi xed program and erase times
– ~ 40 ms vs. more than a minute for 64 Mb
– Results in improved manufacturing effi ciency
No pre-programming or verify required prior to
erase
– Results in signifi cantly lower power
Superior reliability
– 100K cycles and 100 years data retention
Inherent small sector size
– 4 KB erase sector vs. 64 KB
– Results in faster re-write operations and
Densities from 512 Kb to 64 Mb
Operating voltage: 1.8V, 3V and 5V
HW reset/Boot block/Erase suspend
Security ID and page read/write on 64 Mb
Densities from 512 Kb through 64 Mb
Voltages available: 1.8V, 2.5V and 3.0V
Single footprint package up to 32 Mb
Full SPI protocol compatibility
Fast AAI programming mode
and lower costs
consumption
contributes to lowering overall power
consumption
BGA
Micro BGA
M i c r o c h i p T e c h n o l o g y I n c o r p o r a t e d
PLCC
Fast erase performance improves
manufacturing effi ciency and lowers costs!
*Must use external 12V supply to achieve numbers inside ( ).
Memory Cell Structure Comparison
Parameter
Read
Page Read (Word in page
after initial access)
Program
Write Buffer Programming
(up to 16 words)
Erase – Sector (4 KWord
Erase – Block (32 KWord)
Erase – Full Chip
Thicker tunnel
oxide reduces
leakage
improving data
retention and
reliability.
PDIP
Source
Source
TSOP
18 ms
18 ms
40 ms
28 μs
SST38VF640X
7 μs
Typ
–
–
64 Mb
25 ms
25 ms
50 ms
90 ns
25 ns
10 μs
40 μs
Max
Poly 1
(Conventional Flash)
(200 μs)*
SuperFlash
WSON
0.5 sec
240 μs
64 sec
60 μs
N/A
Typ
Competitor A
–
–
Stacked Gate
Split Gate
64 Mb
Poly 2
Poly 1
128 sec
3.5 sec
90 ns
25 ns
Max
N/A
–
–
SOIC
Poly 2
(200 μs)*
®
0.5 sec
240 μs
64 sec
50 μs
N/A
Typ
Competitor B
–
–
64 Mb
XFBGA
Drain
Drain
128 sec
90 ns
25 ns
Max
N/A
–
–
–
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SST39VF801C-70-4C-B3KE-T Summary of contents
Page 1
... SuperFlash® Memory Products High Performance, Low Power Consumption and Superior Reliability What is SuperFlash? SuperFlash is an innovative, highly reliable and versatile type of NOR Flash memory invented by Silicon Storage Technology (SST). SuperFlash memory is much more fl exible and reliable than competing non-volatile memories. This technology ...
Page 2
... Information subject to change. The SST logo, FlashFlex and SuperFlash are registered trademarks and SQI and Serial Quad I/O are trademarks of Microchip Technology Inc. All other trademarks mentioned herein are property of their respective companies. ©2011 Microchip Technology Inc. Silicon Storage Technology is a subsidiary of Microchip Technology Inc. All Rights Reserved. Printed in the U.S.A. 9/11 ...