S34ML02G100BHI000 Spansion, S34ML02G100BHI000 Datasheet - Page 49

• Manufacturer Part Number: S34ML02G100BHI000
• Description: Flash 2Gb 3V 25ns NAND Flash
• Manufacturer: Spansion

Specifications of S34ML02G100BHI000

• Rohs: yes
• Memory Type: NAND Flash
• Memory Size: 2 Gbit
• Timing Type: Asynchronous
• Access Time: 20 ns
• Supply Voltage - Max: 3.6 V
• Supply Voltage - Min: 2.7 V
• Operating Temperature: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Package / Case: BGA-63

6.12
6.13
March 7, 2013 S34ML01G1_04G1_15
Random Data Output In a Page
Multiplane Page Program Operation — S34ML02G1 and S34ML04G1
Notes:
1. Any command between 11h and 81h is prohibited except 70h, 78h, and FFh.
2. A18 is the plane address bit for x8 devices. A17 is the plane address bit for x16 devices.
R/B#
WE#
CLE
CE#
RE#
ALE
I/Ox
R/B#
WE#
CLE
CE#
ALE
RE#
I/Ox
Input Command
Serial Data
80h
tWC
Ex.) Two-Plane Page Program
I/O0~7
R/B#
Add1
Column Address Page Row Address
Col.
00h
Add2
Col.
Column Address
80h
Add. 1
Col.
Add1
Row
Col Add 1,2 & Row Add 1,2,3
Add2
Row
Add. 2
Address & Data Input
Col.
A12 ~ A17: Fixed ‘Low’
A19 ~ A28: Fixed ‘Low’
D a t a
(2112 byte data)
A0 ~ A11: Valid
Add3
Row
Spansion
A18: Fixed ‘Low’
Add. 1
tADL
Row
1 up to 2112 byte
Data Serial Input
Din
N
Row Address
Add. 2
Figure 6.13 Multiplane Page Program
S h e e t
Row
®
Din
M
Figure 6.12 Random Data Output
SLC NAND Flash Memory for Embedded
Command
(Dummy)
11h
Program
11h
Add. 3
Row
tWB
tDBSY: typ. 500 µs
(Note 1)
tDBSY
tWB
max. 1 µs
tDBSY
30h
Busy
tR
tRR
81h
tAR
81h
Col Add 1,2 & Row Add 1,2,3
Dout N
tRC
Address & Data Input
(2112 byte data)
A12 ~ A17: Valid
A19 ~ A28: Valid
A0 ~ A11: Valid
Add1
Col.
tRHW
A18: Fixed ‘High’
Add2
Dout
N +1
Col.
Add1
Row
Add2
Row
05h
10h
Add3
Row
Column Address
Add. 1
Col.
tADL
tPROG
Din
N
Add. 2
Col.
Program Confirm
Command (True)
Din
tWHR
M
70h
tCLR
10h
E0h
tWB
tPROG
Dout M
tREA
Dout
M +1
70h
tWHR
Read Staus
Command
IO
49