S34ML08G101TFI200 Spansion, S34ML08G101TFI200 Datasheet - Page 47
S34ML08G101TFI200
Manufacturer Part Number
S34ML08G101TFI200
Description
Flash 8G, 3V, 25ns NAND Flash
Manufacturer
Spansion
Datasheet
1.S34ML04G100BHI000.pdf
(76 pages)
Specifications of S34ML08G101TFI200
Rohs
yes
Data Bus Width
1 bit
Memory Type
NAND Flash
Memory Size
8 Gbit
Architecture
Sectored
Timing Type
Asynchronous
Access Time
25 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Maximum Operating Current
40 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
TSOP-48
Organization
2048 B x 8, 2048 B x 16
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6.8
6.9
March 7, 2013 S34ML01G1_04G1_15
Page Read Operation Timing with CE# Don’t Care
Page Program Operation
Note:
1. t
R/B#
WE#
CE#
CLE
RE#
ALE
I/Ox
ADL
CLE
CE#
WE#
ALE
RE#
I/Ox
R/B#
is the time from the WE# rising edge of final address cycle to the WE# rising edge of first data cycle.
00h
Input Command Column Address
Serial Data
80h
Add. 1
tWC
Col.
Add. 2
Col.
Add1
Col.
Figure 6.8 Page Read Operation Timing with CE# Don’t Care
Add. 1
Row
D a t a
Spansion
Add2
Col.
Add. 2
Row
Add1
Row.
Add. 3
tWC
Row
S h e e t
Figure 6.9 Page Program Operation
®
Row Address
Add2
SLC NAND Flash Memory for Embedded
Row.
30h
CE#
RE#
I/Ox
Add3
Row.
tR
tRR
tADL
1 up to m byte
Din
N
Serial Input
tCR
Dout
N
tREA
tRC
N + 1
Dout
Dout
tWC
Din
M
N + 2
Dout
CE# don’t care
Command
Program
1
0
h
N + 3
Dout
tWB
N + 4
Dout
tPROG
N + 5
Dout
I/O0=0 Successful Program
I/O0=1 Error in Program
Read Status
Command
: Don’t Care (V IH or V IL )
7
Dout
0
M
h
tWHR
M + 1
Dout
I/O0
M + 2
Dout
47
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