S25FL216K0PMFI040 Spansion, S25FL216K0PMFI040 Datasheet - Page 21

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S25FL216K0PMFI040

Manufacturer Part Number
S25FL216K0PMFI040
Description
Flash 16Mb 3V 65MHz Serial NOR Flash
Manufacturer
Spansion
Datasheet

Specifications of S25FL216K0PMFI040

Rohs
yes
Memory Type
NOR Flash
Memory Size
16 MB
Interface Type
SPI
Access Time
5 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.7 V
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
SO-8

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Part Number:
S25FL216K0PMFI040
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Sunlord
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Part Number:
S25FL216K0PMFI040
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8.9
January 17, 2013 S25FL216K_00_09
Sector Erase (SE) (20h)
The Sector Erase command sets all bits in the addressed 4-kB sector to 1 (all bytes are FFh). Before the
Sector Erase command can be accepted by the device, a Write Enable command must be issued and
decoded by the device, which sets the Write Enable Latch bit in the Status Register to enable any write
operations. The command is initiated by driving the CS# pin low and shifting the command code “20h”
followed by a 24-bit sector address (A23-A0). The Sector Erase command sequence is shown in
The CS# pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Sector Erase command will not be executed. After CS# is driven high, the self-timed Sector Erase command
will commence for a time duration of t
in progress, the Read Status Register command may still be accessed for checking the status of the WIP bit.
The WIP bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is finished and the device
is ready to accept other commands again. After the Sector Erase cycle has finished the Write Enable Latch
(WEL) bit in the Status Register is cleared to 0. The Sector Erase command will not be executed if the
addressed page is protected by the Block Protect (BP3, BP2, BP1, and BP0) bits (see
SI/IO0
SI/IO0
CS #
SCK
CS #
SCK
*=M SB
SO
SO
M o d e 3
M o d e 0
D a t a
7
*
40
0
6
41
1
Instruction (02 H )
5
41
2
S h e e t
Data Byte 2
4
43
3
3
44
4
Figure 8.8 Page Program Command Sequence
2
High Im pedance
45
5
( P r e l i m i n a r y )
1
46
6
SE
0
47
.
7
S25FL216K
See AC Characteristics on page 31.
High Im pedance
23
7
*
*
48
8
22
6
49
9
24 -Bit Address
21
5
10
50
Data Byte 3
4
51 52
3
3
28 29
2
2
53
1
1
54
30 31
0
0
55
7
*
32 33
6
7
*
While the Sector Erase cycle is
5
34 35
6
Data Byte 1
4
5
Data Byte 256
3
36
4
Table 7.1 on page
2
37
3
1
38 39
2
0
1
Figure
0
M o d e 3
M o d e 0
8.9.
13).
21

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