M95512-RMC6TG STMicroelectronics, M95512-RMC6TG Datasheet - Page 37
M95512-RMC6TG
Manufacturer Part Number
M95512-RMC6TG
Description
EEPROM 512kB Serial BUS EE 1.8V to 5.5V ESD
Manufacturer
STMicroelectronics
Datasheet
1.M95512-DFDW6TP.pdf
(51 pages)
Specifications of M95512-RMC6TG
Product Category
EEPROM
Rohs
yes
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M95512-W M95512-R M95512-DR M95512-DF
Table 18.
1. If the application uses the M95512-DF device with 2.5 V V
2. Characterized only, not tested in production.
3. 1 µA for devices identified from date code 301 (year 2013, W01), 3 µA for previous devices
Symbol
I
CC0
I
V
V
V
I
I
instead of the above table.
CC1
V
I
CC
LO
OH
OL
LI
IH
IL
(2)
Input leakage current
Output leakage current
Supply current (Read)
Supply current (Write)
Supply current (Standby
Power mode)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
DC characteristics (M95512-DF products, device grade 6)
Parameter
V
S = V
C = 0.1 V
Q = open
During t
S = V
I
I
OL
OH
IN
Test conditions in addition to those
= 0.15 mA, V
= V
= –0.1 mA, V
CC
CC
SS
W
, voltage applied on Q = V
, V
Doc ID 11124 Rev 20
CC
, S = V
or V
CC
defined in
/0.9 V
= 1.7 V, V
CC
CC
CC
CC
CC
CC
, 1.7 V < V
= 1.7 V
= 1.7 V
at 5 MHz, V
< 5.5 V and -40 °C < TA < +85 °C, please refer to
Table 10
IN
= V
CC
SS
(1)
or V
< 2.5 V
CC
SS
= 1.7 V,
CC
or V
CC
0.7 V
0.8 V
–0.45
Min
DC and AC parameters
CC
CC
0.3 V
V
Max
CC
1
± 2
± 2
2.5
1.5
0.3
(3)
+1
CC
Table 16
Unit
mA
mA
37/51
µA
µA
µA
V
V
V
V
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