M24256-DFMN6TP STMicroelectronics, M24256-DFMN6TP Datasheet - Page 26
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M24256-DFMN6TP
Manufacturer Part Number
M24256-DFMN6TP
Description
EEPROM 256-Kbit I2C EEProm 32kB 1MHz 1.7 5.5V
Manufacturer
STMicroelectronics
Datasheet
1.M24256-DRMN6TP.pdf
(40 pages)
Specifications of M24256-DFMN6TP
Rohs
yes
DC and AC parameters
26/40
Table 14.
1. If the application uses the voltage range R device with 2.5 V
2. Only for devices identified with process letter K.
3. Characterized value, not tested in production.
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
I
I
V
I
V
please refer to
completion of the internal write cycle t
I
CC0
CC1
V
I
LO
CC
OL
LI
IH
IL
Input leakage current
(E1,E2, SCL, SDA)
Output leakage current
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
DC characteristics (M24256-BR, M24256-DR, device grade 6)
Table 13
Parameter
instead of this table.
M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF
Doc ID 6757 Rev 30
W
V
Standby mode
SDA in Hi-Z, external voltage
applied on SDA: V
V
f
During t
Device not selected
V
1.8 V V
1.8 V V
1.8 V V
I
Test conditions
c
OL
(t
IN
CC
IN
= 1 MHz
W
= 1 mA, V
= V
= V
is triggered by the correct decoding of a Write instruction).
= 1.8 V, f
to those in
SS
SS
W
CC
CC
CC
, V
(2)
or V
or V
CC
< 2.5 V
< 2.5 V
< 2.5 V
c
CC
CC
= 400 kHz
CC
= 1.8 V
, device in
, V
= 1.8 V
(1)
Table
SS
CC
(in addition
(4)
V
or V
cc
,
= 1.8 V
< 5.5 V and -40 °C < TA < +85 °C,
7)
CC
0.75 V
0.75 V
–0.45
Min.
-
-
-
-
-
-
-
CC
CC
0.25 V
V
CC
Max.
2
± 2
± 2
0.8
2.5
6.5
0.2
1
(3)
+0.6
CC
Unit
mA
mA
mA
µA
µA
µA
V
V
V
V