M95512-DRMN6TP STMicroelectronics, M95512-DRMN6TP Datasheet - Page 24
M95512-DRMN6TP
Manufacturer Part Number
M95512-DRMN6TP
Description
EEPROM 512Kbit SPIEEPROM 20 MHz 1.8V to 5.5V
Manufacturer
STMicroelectronics
Datasheet
1.M95512-DFDW6TP.pdf
(51 pages)
Specifications of M95512-DRMN6TP
Product Category
EEPROM
Rohs
yes
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- Download datasheet (354Kb)
Instructions
Note:
Figure 14. Page Write (WRITE) sequence
24/51
S
C
D
S
C
D
The instruction is not accepted, and is not executed, under the following conditions:
●
●
●
●
The self-timed write cycle t
events: [Erase addressed byte(s)], followed by [Program addressed byte(s)]. An erased bit is
read as “0” and a programmed bit is read as “1”.
if the Write Enable Latch (WEL) bit has not been set to 1 (by executing a Write Enable
instruction just before),
if a Write cycle is already in progress,
if the device has not been deselected, by driving high Chip Select (S), at a byte
boundary (after the eighth bit, b0, of the last data byte that has been latched in),
if the addressed page is in the region protected by the Block Protect (BP1 and BP0)
bits.
7
32
0
6
33
1
5
34
Data Byte 2
2
4
Instruction
35 36 37 38 39 40 41 42
3
3
4
2
5
1
W
6
0
is internally executed as a sequence of two consecutive
Doc ID 11124 Rev 20
7
7
15
8
6
14 13
9 10
5
Data Byte 3
16-Bit Address
4
43
3
44 45 46 47
3
M95512-W M95512-R M95512-DR M95512-DF
20 21 22 23 24 25 26 27
2
2
1
1
0
0
7
6
6
5
Data Byte N
5
Data Byte 1
4
4
3
3
28 29 30
2
2
1
1
0
0
31
AI01796D
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