CAT24C128HU4IGT3 ON Semiconductor, CAT24C128HU4IGT3 Datasheet - Page 2

• Manufacturer Part Number: CAT24C128HU4IGT3
• Description: EEPROM DPPNV32TAPSUP/DOWN
• Manufacturer: ON Semiconductor

Specifications of CAT24C128HU4IGT3

• Product Category: EEPROM
• Rohs: yes

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
3. Page Mode, V
4. The new product revision (C) uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when
5. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
6. When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull−down is relatively strong;
Table 1. ABSOLUTE MAXIMUM RATINGS
Table 2. RELIABILITY CHARACTERISTICS
Table 3. D.C. OPERATING CHARACTERISTICS − Mature Product (Rev B)
(V
Table 4. PIN IMPEDANCE CHARACTERISTICS − Mature Product (Rev B)
(V
Storage Temperature
Voltage on Any Pin with Respect to Ground (Note 1)
N
C
C
I
undershoot to no less than −1.5 V or overshoot to no more than V
END
and JEDEC test methods.
a single byte has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order
to benefit from the maximum number of write cycles.
and JEDEC test methods.
therefore the external driver must be able to supply the pull−down current when attempting to drive the input HIGH. To conserve power, as
the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V
CC
CC
WP
IN
IN
Symbol
Symbol
Symbol
= 1.8 V to 5.5 V, T
I
V
V
= 1.8 V to 5.5 V, T
I
(Note 5)
(Note 5)
(Note 6)
CCW
CCR
V
(Notes 3, 4)
I
V
OL1
OL2
SB
I
T
L
IH
IL
DR
CC
Read Current
Write Current
Standby Current
I/O Pin Leakage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
SDA I/O Pin Capacitance
Input Capacitance (other pins)
WP Input Current
= 5 V, 25°C
Endurance
Data Retention
Parameter
A
A
= −40°C to +125°C, unless otherwise specified.)
= −40°C to +125°C, unless otherwise specified.)
Parameter
Parameter
All I/O Pins at GND or V
Parameter
Pin at GND or V
(Note 2)
http://onsemi.com
V
V
CC
CC
Read, f
Write, f
Test Conditions
< 2.5 V, I
< 2.5 V, I
CC
SCL
SCL
CC
2
CC
+ 1.5 V, for periods of less than 20 ns.
= 400 kHz
= 400 kHz
OL
OL
CC
= 3.0 mA
= 1.0 mA
T
T
), the strong pull−down reverts to a weak current source.
T
T
A
A
A
A
= −40°C to +125°C
= −40°C to +125°C
= −40°C to +85°C
= −40°C to +85°C
CC
+ 0.5 V. During transitions, the voltage on any pin may
1,000,000
Min
100
Conditions
V
V
V
V
IN
IN
IN
IN
= 0 V
= 0 V
< V
> V
IH
IH
V
CC
−65 to +150
−0.5 to +6.5
−0.5
Min
Rating
Program / Erase Cycles
x 0.7
Years
V
Units
V
CC
CC
Max
Max
200
0.4
0.2
8
6
1
1
3
1
2
1
2
x 0.3
+ 0.5
Units
Units
Units
mA
mA
mA
mA
°C
pF
pF
mA
mA
V
V
V
V
V