M24128-DFMC6TG STMicroelectronics, M24128-DFMC6TG Datasheet - Page 26
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M24128-DFMC6TG
Manufacturer Part Number
M24128-DFMC6TG
Description
EEPROM 128-Kbit I2C EEProm 1MHz 1.7V to 5.5V
Manufacturer
STMicroelectronics
Datasheet
1.M24128-DFDW6TP.pdf
(41 pages)
Specifications of M24128-DFMC6TG
Rohs
yes
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DC and AC parameters
26/41
Table 14.
1. If the application uses the voltage range R device with 2.5 V < V
2. Only for devices identified with process letter K.
3. Characterized value, not tested in production.
4. 3 mA for previous devices identified by process letter A.
5. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
6. I
Symbol
I
I
V
I
V
please refer to
completion of the internal write cycle t
I
CC0
CC1
V
I
OL
LO
CC
OL
LI
IH
IL
= 0.7 mA for devices identified by process letters G or S.
Input leakage current
(E0, E1, E2, SCL, SDA)
Output leakage current
Supply current (Read)
Supply current (Write)
Standby supply current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E2, E1, E0)
Output low voltage
DC characteristics (M24128-BR, device grade 6)
Table 13
Parameter
instead of this table.
Doc ID 16892 Rev 22
W
V
device in Standby mode
SDA in Hi-Z, external voltage
applied on SDA: V
V
f
During t
2.5 V
Device not selected
V
1.8 V V
1.8 V V
1.8 V V
I
Test conditions
c
OL
(t
IN
CC
IN
= 1 MHz
W
= 1 mA, V
= V
= V
is triggered by the correct decoding of a Write instruction).
= 1.8 V, f
to those in
M24128-BW M24128-BR M24128-BF M24128-DF
SS
SS
W
CC
CC
CC
, 1.81.7 V < V
(2)
or V
or V
< 2.5 V
< 2.5 V
< 2.5 V
c
CC
CC
= 400 kHz
CC
, V
= 1.8 V
(1)
Table
SS
CC
(in addition
(5)
or V
cc
,
= 1.8 V
CC
(6)
< 5.5 V and -40 °C < TA < +85 °C,
7)
CC
<
0.75 V
0.75 V
–0.45
Min.
-
-
-
-
-
-
-
CC
CC
0.25 V
V
2
CC
Max.
± 2
± 2
0.8
2.5
(3)(4)
6.5
0.2
1
+0.6
CC
Unit
mA
mA
mA
µA
µA
µA
V
V
V
V