CAT24M01YI-GT3 ON Semiconductor, CAT24M01YI-GT3 Datasheet - Page 2

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CAT24M01YI-GT3

Manufacturer Part Number
CAT24M01YI-GT3
Description
EEPROM 1MB I2C SERIAL EEPROM
Manufacturer
ON Semiconductor
Datasheet

Specifications of CAT24M01YI-GT3

Rohs
yes
Memory Size
1 MB
Data Retention
100 yr
Maximum Clock Frequency
1000 KHz
Maximum Operating Current
1 mA
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-8

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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
3. Test Condition: Page Mode, V
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
Table 1. ABSOLUTE MAXIMUM RATINGS
Table 2. RELIABILITY CHARACTERISTICS
Table 3. D.C. OPERATING CHARACTERISTICS
V
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
CC
Symbol
N
undershoot to no less than −1.5 V or overshoot to no more than V
and JEDEC test methods.
has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
I
V
V
I
END
V
V
V
V
24M01A = Specific Device Code
A
Y
M
XXX = Last Three Digits of
XXX =
CCW
CCR
I
OL1
OL2
= 1.8 V to 5.5 V, T
SB
I
IH1
IH2
IL1
IL2
L
Symbol
(Notes 3, 4)
= Assembly Location
= Production Year (Last Digit)
= Production Month (1−9, O, N, D)
T
DR
Assembly Lot Number
Read Current
Write Current
Standby Current
I/O Pin Leakage
Input Low Voltage
Input Low Voltage
Input High Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
(SOIC−8)
AYMXXX
24M01A
Parameter
A
= −40°C to +85°C and V
Endurance
Data Retention
CC
= 5 V, 25°C.
Parameters
Read, f
V
V
All I/O Pins at GND or V
Pin at GND or V
2.5 V ≤ V
1.8 V ≤ V
2.5 V ≤ V
1.8 V ≤ V
V
V
CC
CC
CC
CC
= 1.8 V
= 5.5 V
≥ 2.5 V, I
< 2.5 V, I
SCL
CC
CC
CC
CC
CC
Parameter
(Note 2)
= 2.5 V to 5.5 V, T
= 400 kHz / 1 MHz
M0L = Specific Device Code
A
LL
Y
M
G
≤ 5.5 V
< 2.5 V
≤ 5.5 V
< 2.5 V
OL
OL
MARKING DIAGRAMS
CC
= 3.0 mA
= 1.0 mA
http://onsemi.com
= Assembly Location Code
= Assembly Lot Number
= Year
= Month
= Pb−Free Package
Test Conditions
(UDFN−8)
M0L
ALL
CC
YM
G
2
CC
A
+ 1.5 V, for periods of less than 20 ns.
= −40°C to +125°C, unless otherwise specified.
T
T
T
T
A
A
A
A
= −40°C to +85°C
= −40°C to +125°C
= −40°C to +85°C
= −40°C to +125°C
CC
+ 0.5 V. During transitions, the voltage on any pin may
1,000,000
24M01A = Specific Device Code
A
XXX = Last Three Digits of
XXX =
YY = Production Year (Last Two Digits)
WW = Production Week (Two Digits)
G
Min
100
= Assembly Location
= Pb−Free Designator
0.75 V
0.7 V
–65 to +150
–0.5 to +6.5
Assembly Lot Number
−0.5
−0.5
Min
Ratings
CC
CC
(PDIP−8)
YYWWG
24M01A
Program/Erase Cycles
AXXX
V
V
0.25 V
0.3 V
CC
CC
Max
3.5
5.0
0.4
0.2
1
2
5
1
2
Years
Units
+ 0.5
+ 0.5
CC
CC
Units
Units
°C
V
mA
mA
mA
mA
V
V
V
V
V
V

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