CAT25512YI-GT3 ON Semiconductor, CAT25512YI-GT3 Datasheet - Page 2

• Manufacturer Part Number: CAT25512YI-GT3
• Description: EEPROM
• Manufacturer: ON Semiconductor

Specifications of CAT25512YI-GT3

• Rohs: yes
• Memory Size: 512 KB
• Organization: 64 K x 8
• Data Retention: 100 yr
• Maximum Clock Frequency: 20 MHz
• Maximum Operating Current: 2 mA
• Operating Supply Voltage: 2.5 V to 5.5 V
• Maximum Operating Temperature: + 130 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
3. Page Mode, V
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
Table 1. ABSOLUTE MAXIMUM RATINGS
Table 2. RELIABILITY CHARACTERISTICS
Table 3. D. C. OPERATING CHARACTERISTICS
(V
Operating Temperature
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
Symbol
undershoot to no less than −1.5 V or overshoot to no more than V
N
and JEDEC test methods.
has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
V
V
I
V
V
CC
I
V
V
I
I
V
V
CCW
CCR
END
I
SB1
SB2
OH1
OH2
OL1
OL2
I
LO
IH1
IH2
IL1
IL2
L
= 1.8 V to 5.5 V, T
Symbol
(Note 3, 4)
T
DR
Input Leakage Current
Output High Voltage
Output High Voltage
Output Low Voltage
Output Low Voltage
Input High Voltage
Input High Voltage
CC
Input Low Voltage
Input Low Voltage
Standby Current
Standby Current
Output Leakage
Supply Current
Supply Current
(Read Mode)
(Write Mode)
= 5 V, 25°C.
Parameter
Current
A
Endurance
Data Retention
= −40°C to +85°C and V
Read, SO open /
−40°C to +85°C
Read, SO open /
−40°C to +125°C
Write, CS = V
−40°C to +85°C
Write, CS = V
−40°C to +125°C
V
CS = V
HOLD = V
V
V
CS = V
HOLD = GND,
V
V
CS = V
V
IN
CC
IN
CC
IN
OUT
Parameters
= GND or V
= GND or V
= GND or V
Parameter
= 5.5 V
= 5.5 V
= GND or V
CC
CC
CC
CC
, WP = V
, WP = GND,
(Note 2)
CC
= 2.5 V to 5.5 V, T
,
CC
CC
V
V
V
V
CC
CC
CC
CC
CC
http://onsemi.com
/
/
CC
CC
CC
,
,
CC
≥ 2.5 V, I
< 2.5 V, I
Test Conditions
< 2.5 V, I
≥ 2.5 V, I
,
V
V
V
V
CC
CC
CC
CC
CC
≥ 2.5 V
≥ 2.5 V
< 2.5 V
< 2.5 V
2
OH
V
V
OH
V
OL
OL
CC
CC
+ 1.5 V, for periods of less than 20 ns.
A
CC
T
T
= −1.6 mA
2.5 V < V
T
T
= −100 mA
= 3.0 mA
1.8 V < V
2.5 V < V
= 150 mA
A
A
= −40°C to +125°C, unless otherwise specified)
= 2.5 V, f
= 5.5 V, f
A
A
= 1.8 V, f
= −40°C to +125°C
= −40°C to +125°C
f
= −40°C to +85°C
= −40°C to +85°C
SCK
= 10 MHz
CC
CC
CC
CC
SCK
SCK
SCK
< 5.5 V,
+ 0.5 V. During transitions, the voltage on any pin may
1,000,000
< 5.5 V
< 5.5 V
= 10 MHz
= 20 MHz
= 5 MHz
Min
100
V
V
0.75V
CC
CC
0.7V
−0.5
−0.5
Min
−2
−2
− 0.8V
− 0.2V
Program / Erase Cycles
CC
−45 to +130
−65 to +150
−0.5 to +6.5
CC
Ratings
V
V
Years
Units
0.25V
0.3V
CC
CC
Max
1.2
1.8
0.4
0.2
3
3
2
2
1
3
3
5
2
2
+ 0.5
+ 0.5
CC
CC
Units
Units
°C
°C
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V