CAT24C512YI-G ON Semiconductor, CAT24C512YI-G Datasheet - Page 3

• Manufacturer Part Number: CAT24C512YI-G
• Description: EEPROM 512KB I2C SER EEPROM
• Manufacturer: ON Semiconductor

Specifications of CAT24C512YI-G

• Rohs: yes

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
3. Page Mode, V
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
5. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
6. When not driven, the WP, A
Table 1. ABSOLUTE MAXIMUM RATINGS
Table 2. RELIABILITY CHARACTERISTICS
Table 3. D.C. OPERATING CHARACTERISTICS
V
Table 4. PIN IMPEDANCE CHARACTERISTICS
V
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
CC
Symbol
CC
undershoot to no less than −1.5 V or overshoot to no more than V
and JEDEC test methods.
has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
and JEDEC test methods.
strong; therefore the external driver must be able to supply the pull−down current when attempting to drive the input HIGH. To conserve power,
as the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V
I
V
V
I
I
N
V
V
V
V
CCW
WP
CCR
I
SB
OL1
OL2
C
C
= 1.8 V to 5.5 V, T
I
= 1.8 V to 5.5 V, T
IH1
IH2
END
IL1
IL2
L
IN
IN
, I
Symbol
Symbol
A
(Note 5)
(Note 5)
(Notes 3, 4)
T
(Note 6)
DR
Read Current
Write Current
Standby Current
I/O Pin Leakage
Input Low Voltage
Input Low Voltage
Input High Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
CC
= 5 V, 25°C.
Parameter
A
A
= −40°C to +85°C and V
= −40°C to +85°C and V
SDA I/O Pin Capacitance
Input Capacitance (other pins)
WP Input Current, Address Input
Current (A
Endurance
Data Retention
0
, A
1
, A
0
, A
2
Parameter
pins are pulled down to GND internally. For improved noise immunity, the internal pull−down is relatively
Parameters
1
, A
Read, f
V
V
All I/O Pins at GND or V
Pin at GND or V
2.5 V ≤ V
1.8 V ≤ V
2.5 V ≤ V
1.8 V ≤ V
V
V
CC
CC
CC
CC
2
)
= 1.8 V
= 5.5 V
< 2.5 V, I
≥ 2.5 V, I
SCL
CC
CC
CC
CC
CC
CC
(Note 2)
= 2.5 V to 5.5 V, T
= 400 kHz/1 MHz
= 2.5 V to 5.5 V, T
Parameter
≤ 5.5 V
< 2.5 V
≤ 5.5 V
< 2.5 V
OL
OL
CC
= 3.0 mA
= 1.0 mA
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Test Conditions
V
V
V
V
V
V
CC
IN
IN
IN
IN
IN
IN
< V
< V
< V
> V
= 0 V
= 0 V
CC
3
A
A
IH
IH
IH
IH
+ 1.5 V, for periods of less than 20 ns.
= −40°C to +125°C, unless otherwise specified.
= −40°C to +125°C, unless otherwise specified.
, V
, V
, V
T
T
T
T
A
A
A
A
CC
CC
CC
= −40°C to +85°C
= −40°C to +125°C
= −40°C to +85°C
= −40°C to +125°C
CC
Conditions
= 5.5 V
= 3.3 V
= 1.8 V
), the strong pull−down reverts to a weak current source.
CC
+ 0.5 V. During transitions, the voltage on any pin may
1,000,000
Min
100
0.75 V
0.7 V
–65 to +150
–0.5 to +6.5
−0.5
−0.5
Min
Ratings
CC
CC
Program/Erase Cycles
Max
75
50
25
V
V
0.25 V
8
6
2
0.3 V
CC
CC
Max
1.8
2.5
0.4
0.2
1
2
5
1
2
Units
Years
+ 0.5
+ 0.5
CC
CC
Units
Units
Units
°C
pF
pF
mA
V
mA
mA
mA
mA
V
V
V
V
V
V