NLSX4373DR2G ON Semiconductor, NLSX4373DR2G Datasheet - Page 3

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NLSX4373DR2G

Manufacturer Part Number
NLSX4373DR2G
Description
TRANSLATOR 2BIT DUAL BIDIR 8SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of NLSX4373DR2G

Logic Function
Translator, Bidirectional, Open Drain
Number Of Bits
2
Input Type
Voltage
Output Type
Voltage
Data Rate
20Mbps
Number Of Channels
2
Number Of Outputs/channel
1
Differential - Input:output
No/No
Propagation Delay (max)
20ns
Voltage - Supply
1.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Supply Voltage
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
RECOMMENDED OPERATING CONDITIONS
MAXIMUM RATINGS
Symbol
V
V
I/O V
I/O V
V
I
T
I/O_SC
Symbol
STG
CC
L
EN
V
V
V
V
T
CC
EN
IO
CC
L
A
L
High−side DC Supply Voltage
High−side DC Supply Voltage
V
V
Enable Control Pin DC Input Voltage
Short−Circuit Duration (I/O V
Storage Temperature
CC
L
High−side Positive DC Supply Voltage
High−side Positive DC Supply Voltage
Enable Control Pin Voltage
Enable Control Pin Voltage
Operating Temperature Range
−Referenced DC Input/Output Voltage
−Referenced DC Input/Output Voltage
EN
I/O V
R
10 kW
Pullup
L
V
L
Parameter
PU1
L
and I/O V
Parameter
Figure 1. Block Diagram (1 I/O Line)
CC
One−Shot
Block
to GND)
http://onsemi.com
N
Gate
Bias
3
−0.3 to (V
One−Shot
−0.3 to (V
Block
−0.3 to +7.0
−0.3 to +7.0
−0.3 to +7.0
−65 to +150
Value
40
CC
L
+ 0.3)
+ 0.3)
PU2
GND
GND
Min
−40
1.5
1.5
Continuous
R
10 kW
V
Pullup
CC
I/O V
Condition
EN
CC
Max
+85
5.5
5.5
5.5
5.5
Unit
Unit
°C
mA
V
V
V
V
°C
V
V
V
V
V

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