CAT661EVA-GT3 ON Semiconductor, CAT661EVA-GT3 Datasheet - Page 3

• Manufacturer Part Number: CAT661EVA-GT3
• Description: Charge Pumps CHG PUMP VOLT CONVERTER
• Manufacturer: ON Semiconductor

Specifications of CAT661EVA-GT3

• Rohs: yes
• Function: Inverting
• Output Voltage: 5 V to 11 V
• Output Current: 100 mA
• Supply Current: 0.5 mA
• Maximum Operating Temperature: + 105 C
• Package / Case: SOIC-8
• Input Voltage: 2.5 V to 5.5 V
• Maximum Power Dissipation: 500 mW
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Switching Frequency: 12.5 KHz

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE: T
4. In Figure 3, test circuit electrolytic capacitors C1 and C2 are 100 mF and have 0.2 W maximum ESR. Higher ESR levels may reduce efficiency
5. The output resistance is a combination of the internal switch resistance and the external capacitor ESR. For maximum voltage and efficiency
6. FOSC is tested with C
Table 3. ELECTRICAL CHARACTERISTICS
Figure 3 unless otherwise noted. Temperature is T
Table 2. ABSOLUTE MAXIMUM RATINGS
Supply Voltage
Supply Current
Output Current
Output Resistance
Oscillator Frequency
(Note 6)
OSC Input Current
Power Efficiency
Voltage Conversion
Efficiency
V+ to GND
Input Voltage (Pins 1, 6 and 7)
BOOST/FC and OSC Input Voltage
Output Short−circuit Duration to GND
(OUT may be shorted to GND for 1 sec without damage but shorting OUT
to V+ should be avoided.)
Continuous Power Dissipation (T
Storage Temperature
Lead Soldering Temperature (10 sec)
ESD Rating − Human Body Model
Operating Ambient Temperature Range
and output voltage.
keep external capacitor ESR under 0.2 W.
at OSC when the device is inserted into a test socket without an external C
Plastic DIP
SO
TDFN
Parameter
A
= Ambient Temperature
OSC
Symbol
FOSC
VEFF
IOSC
IOUT
RO
VS
PE
IS
= 100 pF to minimize test fixture loading. The test is correlated back to C
Parameters
A
= 70°C)
Inverter: LV = Open, R
Inverter: LV = GND, R
Doubler: LV = OUT, R
BOOST/FC = open, LV = Open
BOOST/FC = V+, LV = Open
OUT is more negative than −4 V
C1 = C2 = 10 mF
BOOST/FC = V+ (C1, C2 ESR ≤ 0.5 W)
C1 = C2 = 100 mF (Note 5)
BOOST/FC = Open
BOOST/FC = V+
BOOST/FC = Open
BOOST/FC = V+
R
T
R
T
I
No load, T
L
A
A
L
L
= 100 mA to GND, T
= 25°C (Doubler)
= 25°C (Inverter)
= 1 kW connected between V+ and OUT,
= 500 W connected between GND and OUT,
A
= 25°C
A
(V+ = 5 V, C1 = C2 = 100 mF, Boost/FC = Open, C
= T
AMIN
Conditions
http://onsemi.com
L
L
to T
L
A
= 1 kW
= 1 kW
= 1 kW
= 25°C (Inverter)
AMAX
3
unless otherwise noted.)
OSC
.
The least negative of (Out − 0.3 V) or
(V+ − 6 V) to (V+ + 0.3 V)
Min
100
−0.3 to (V+ + 0.3)
3.0
1.5
2.5
10
80
96
92
99
−65 to +160
−40 to +85
Ratings
OSC
2000
730
500
300
OSC
6
1
1
= 0 pF to simulate the capacitance
= 0 pF, and Test Circuit is
99.9
Typ
135
±10
0.2
3.5
3.5
25
±2
98
96
88
1
Max
5.5
5.5
5.5
0.5
10
10
3
Units
Units
sec.
mW
mW
kHz
mA
mA
°C
°C
°C
W
mA
V
V
V
V
W
%
%
V