MAX1226BEEE-T Maxim Integrated, MAX1226BEEE-T Datasheet - Page 2

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MAX1226BEEE-T

Manufacturer Part Number
MAX1226BEEE-T
Description
Analog to Digital Converters - ADC
Manufacturer
Maxim Integrated
Datasheet

Specifications of MAX1226BEEE-T

Number Of Channels
8/4
Architecture
SAR
Conversion Rate
300 KSPs
Resolution
12 bit
Input Type
Single-Ended/Differential
Snr
70 dB
Interface Type
Serial
Operating Supply Voltage
4.75 V to 5.25 V
Maximum Operating Temperature
+ 85 C
Package / Case
QSOP-16
Maximum Power Dissipation
667 mW
Minimum Operating Temperature
- 40 C
Number Of Converters
1
Voltage Reference
Internal 4.096 V or External
ABSOLUTE MAXIMUM RATINGS
V
CS, SCLK, DIN, EOC, DOUT to GND.........-0.3V to (V
AIN0–AIN13, REF-/AIN_, CNVST/AIN_,
Maximum Current into Any Pin............................................50mA
Continuous Power Dissipation (T
12-Bit 300ksps ADCs with FIFO,
Temp Sensor, Internal Reference
ELECTRICAL CHARACTERISTICS
(V
Typical values are at T
2
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ACCURACY (Note 1)
Resolution
Integral Nonlinearity
Differential Nonlinearity
Offset Error
Gain Error
Offset Error Temperature
Coefficient
Gain Temperature Coefficient
Channel-to-Channel Offset
Matching
DYNAMIC SPECIFICATIONS (30kHz sine wave input, 4.096V
Signal-to-Noise Plus Distortion
Total Harmonic Distortion
Spurious-Free Dynamic Range
Intermodulation Distortion
Full-Power Bandwidth
Full-Linear Bandwidth
DD
DD
16-Pin QSOP (derate 8.3mW/°C above +70°C)...........667mW
20-Pin QSOP (derate 9.1mW/°C above +70°C)...........727mW
24-Pin QSOP (derate 9.5mW/°C above +70°C)...........762mW
28-Pin Thin QFN 5mm x 5mm
REF+ to GND.........................................-0.3V to (V
_______________________________________________________________________________________
to GND ..............................................................-0.3V to +6V
(derate 20.8mW/°C above +70°C) ........................1667mW
= +5V ±5%, f
PARAMETER
SAMPLE
A
= +25°C.)
= 300kHz, f
A
= +70°C)
SYMBOL
SINAD
SCLK
SFDR
DNL
THD
RES
IMD
INL
= 4.8MHz (50% duty cycle), V
No missing codes over temperature
(Note 2)
Up to the 5th harmonic
f
-3dB point
S / (N + D) > 68dB
in1
DD
DD
= 29.9kHz, f
+ 0.3V)
+ 0.3V)
P-P
CONDITIONS
in2
, 300ksps, f
= 30.2kHz
Operating Temperature Ranges
Storage Temperature Range .............................-60°C to +150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
MAX12__C__.......................................................0°C to +70°C
MAX12__E__ ....................................................-40°C to +85°C
REF
= 4.096V, T
SCLK
= 4.8MHz)
A
= T
MIN
MIN
12
to T
MAX
±0.5
±0.5
±0.8
±0.1
TYP
100
-88
±2
73
89
76
, unless otherwise noted.
1
MAX
±1.0
±1.0
±4.0
±4.0
ppm/°C
ppm/°C
UNITS
MHz
LSB
LSB
LSB
LSB
FSR
LSB
dBc
dBc
dBc
kHz
Bits
dB

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