MCF51QM128VLHR Freescale Semiconductor, MCF51QM128VLHR Datasheet - Page 30

• Manufacturer Part Number: MCF51QM128VLHR
• Description: 16-bit Microcontrollers - MCU ColdFireV1,128KFlash
• Manufacturer: Freescale Semiconductor

Specifications of MCF51QM128VLHR

• Rohs: yes
• Core: ColdFire V1
• Processor Series: MCF51QM128
• Data Bus Width: 16 bit
• Maximum Clock Frequency: 50 MHz
• Program Memory Size: 128 KB
• On-chip Adc: Yes
• Operating Supply Voltage: 1.71 V to 3.6 V
• Operating Temperature Range: - 40 C to + 105 C
• Package / Case: LQFP-64
• Mounting Style: SMD/SMT

Memories and memory interfaces
6.4.1.4 Reliability specifications
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
2. Data retention is based on T
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ T
4. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
30
n
n
t
n
n
n
t
t
t
t
t
nvmretee100
t
t
t
nvmwree128
nvmwree512
nvmretp10k
nvmretp100
nvmretd10k
nvmretd100
nvmretee10
n
n
Symbol
nvmwree16
nvmretp1k
nvmretd1k
nvmretee1
nvmwree4k
nvmwree8k
nvmcycp
nvmcycd
25°C use profile. Engineering Bulletin EB618 does not apply to this technology.
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup. Minimum and typical values
assume all byte-writes to FlexRAM.
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Data retention after up to 100 cycles
Cycling endurance
Data retention up to 100% of write endurance
Data retention up to 10% of write endurance
Data retention up to 1% of write endurance
Write endurance
Description
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio = 8192
javg
Table 20. NVM reliability specifications
= 55°C (temperature profile over the lifetime of the application).
MCF51QM128 Data Sheet, Rev. 6, 01/2012.
FlexRAM as EEPROM
Program Flash
Data Flash
1.27 M
315 K
10 M
20 M
10 K
10 K
35 K
Min.
10
15
10
15
10
15
5
5
5
100 M
175 K
1.6 M
6.4 M
Typ.
50 M
j
35 K
35 K
100
100
100
100
100
100
≤ 125°C.
50
50
50
1
Max.
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Freescale Semiconductor, Inc.
cycles
cycles
writes
writes
writes
writes
writes
years
years
years
years
years
years
years
years
years
Unit
Notes
2
2
2
3
2
2
2
3
2
2
2
4