SiT8102AI-13-33E-24.00000X SiTime, SiT8102AI-13-33E-24.00000X Datasheet
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SiT8102AI-13-33E-24.00000X
Specifications of SiT8102AI-13-33E-24.00000X
Related parts for SiT8102AI-13-33E-24.00000X
SiT8102AI-13-33E-24.00000X Summary of contents
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... Wide frequency range • 200 MHz • Operating voltage • 1.8, 2.5, 2.8V or 3.3 V • Other voltages up to 3.63 V (contact SiTime) • Operating temperature range • Industrial, - °C • Extended Commercial, - °C • Commercial °C • Small footprint • ...
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... The output driver strength can be programmed to drive up to 50pF load. Please contact factory for this option. Rev. 1.10 System reliability is also increased with the SiT8102 by elimi- nating the quartz crystal and improved immunity to the environmental effects of vibration, shock, strain, and humidity. To order samples www.sitime.com and click on Request Sample” link. Min. -65 -0.5 – ...
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... Max. Unit – – %Vdd – 10 %Vdd – – %Vdd – 30 %Vdd – – µA – Max. Unit – – %Vdd – 10 %Vdd – – %Vdd – 30 %Vdd – – µA – www.sitime.com ...
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... PPM +100 PPM – 1 PPM – – 1.0 1.5 ns 1.0 1 2.4 3.6 ps – ps – ps – ps Max. Unit – 200 MHz – +10 PPM – +15 PPM – +20 PPM +25 PPM +50 PPM +100 PPM – 1 PPM – – 1.0 1.5 ns 1 – ps 1.7 – ps – ps www.sitime.com ...
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... Page Max. Unit – 200 MHz – +15 PPM – +20 PPM +25 PPM +50 PPM +100 PPM – 1 PPM – – 1.0 1.5 ns 1.0 1 – ps – ps – ps www.sitime.com ...
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... PPM “H” for ±15 PPM “1” for ±20 PPM “2” for ±25 PPM “3” for ±50 PPM “4” for ±100 PPM www.sitime.com ...
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... SiT8102 1 to 200 MHz High Performance Oscillator Package Information [4,5] Dimension (mm) 2.5 x 2.0 x 0.75mm 2.5±0.10 1.0 YXXXX 0.75 0.75±0.05 3.2 x 2.5 x 0.75 mm 3.2±0.15 YXXXX 0.75±0.05 5.0 x 3.2 x 0.75 mm 5.0±0.15 YXXXX 0.75±0.05 Rev. 1.10 Land Pattern (recommended) (mm) 2.1 0.9 2.39 1.15 Page [6] 1.9 1.1 2.2 1.4 2.54 1.5 www.sitime.com ...
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... SiTime Corporation 2010. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress ...