IS42S16400F-5BLI-TR ISSI, IS42S16400F-5BLI-TR Datasheet - Page 16
![no-image](/images/no-image-200.jpg)
IS42S16400F-5BLI-TR
Manufacturer Part Number
IS42S16400F-5BLI-TR
Description
DRAM 64M (4Mx16) 200MHz Industrial Temp
Manufacturer
ISSI
Datasheet
1.IS45S16400F-5BLA1.pdf
(59 pages)
Specifications of IS42S16400F-5BLI-TR
Product Category
DRAM
Rohs
yes
Data Bus Width
16 bit
Package / Case
TFBGA-54
Memory Size
64 Mbit
Maximum Clock Frequency
200 MHz
Access Time
6 ns, 5 ns
Supply Voltage - Max
3.6 V
Supply Voltage - Min
3 V
Maximum Operating Current
150 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Factory Pack Quantity
2500
IS42S16400F
IS45S16400F
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
—
—
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AC TEST CONDITIONS
Input Load
16
SYMBOL
OUTPUT
ccd
cked
ped
dqd
dqm
dqz
dwd
dal
dpl
bdl
cdl
rdl
mrd
roh
INPUT
CLK
3.0V
1.4V
3.0V
1.4V
0V
0V
PARAMETER
Clock Cycle Time
Operating Frequency
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command
to ACTIVE or REFRESH command
Data-out to high-impedance from
PRECHARGE command
t
t
OH
CMS
1.4V
t
CMH
t
(Input/Output Reference Level: 1.4V)
CH
t
AC
t
CK
t
CL
1.4V
Output Load
CL=3
CL=2
CL=3
CL=2
CL=3
CL=2
CL=3
CL=2
Integrated Silicon Solution, Inc. — www.issi.com
I/O
200
133
7.5
-5
5
1
1
1
0
0
2
0
5
4
2
1
1
2
2
3
2
50 pF
166
133
7.5
-6
6
1
1
1
0
0
2
0
5
5
2
1
1
2
2
3
2
50 Ω
143
133
7.5
-7
7
1
1
1
0
0
2
0
5
5
2
1
1
2
2
3
2
+1.4V
UNITS
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
MHz
12/01/2011
MH
ns
ns
Rev. I