8N3Q001EG-1033CDI IDT, 8N3Q001EG-1033CDI Datasheet - Page 14

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8N3Q001EG-1033CDI

Manufacturer Part Number
8N3Q001EG-1033CDI
Description
Programmable Oscillators
Manufacturer
IDT
Series
IDT8Nr
Datasheet

Specifications of 8N3Q001EG-1033CDI

Package / Case
5 mm x 7 mm x 1.5 mm
Frequency
15.476 MHz to 866.67, 975 MHz to 1300 MHz
Frequency Stability
+/- 50 PPM
Supply Voltage
3.63 V
Load Capacitance
10 pF
Termination Style
SMD/SMT
Output Format
LVPECL
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 85 C
Dimensions
7 mm W x 5 mm L x 1.5 mm H
Product
VCXO
Supply Voltage - Max
3.465 V
Supply Voltage - Min
3.135 V
Part # Aliases
IDT8N3Q001EG-1033CDI
IDT8N3Q001 REV G Data Sheet
Power Considerations
This section provides information on power dissipation and junction temperature for the IDT8N3Q001. 
Equations and example calculations are also provided.
1.
The total power dissipation for the IDT8N3Q001 is the sum of the core power plus the power dissipated in the load(s). 
The following is the power dissipation for V
NOTE: Please refer to Section 3 for details on calculating power dissipated in the load.
Total Power_
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond
wire and bond pad temperature remains below 125°C.
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance 
a multi-layer board, the appropriate value is 49.4°C/W per Table 7 below.
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of
board (multi-layer).
Table 7. Thermal Resistance
IDT8N3Q001GCD REVISION A MARCH 6, 2012
Meters per Second
Multi-Layer PCB, JEDEC Standard Test Boards
Power Dissipation.
Power (core)
Power (outputs)
The equation for Tj is as follows: Tj = 
Tj = Junction Temperature
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
T
85°C + 0.519W * 49.4°C/W = 110.7°C. This is below the limit of 125°C.
JA
A
= Ambient Temperature
= Junction-to-Ambient Thermal Resistance
MAX
(3.465V, with all outputs switching) = 485.1mW + 34.2mW = 519.3mW
MAX
MAX
= V
= 34.2mW/Loaded Output pair
CC_MAX
JA
* I
for 10 Lead Ceramic 5mm x 7mm Package, Forced Convection
EE_MAX
CC
= 3.465V, which gives worst case results.
JA
= 3.465V * 140mA = 485.1mW
* Pd_total + T
JA
A
49.4°C/W
by Velocity
14
0
44.2°C/W
JA
1
must be used. Assuming no air flow and
QUAD-FREQUENCY PROGRAMMABLE-XO
©2012 Integrated Device Technology, Inc.
41°C/W
2.5

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