PI3B32160AE Pericom Semiconductor, PI3B32160AE Datasheet - Page 2

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PI3B32160AE

Manufacturer Part Number
PI3B32160AE
Description
IC 16:32BIT DEMUX BUS SW 56TSSOP
Manufacturer
Pericom Semiconductor
Type
Demultiplexerr
Datasheet

Specifications of PI3B32160AE

Circuit
16 x 1:2
Independent Circuits
1
Voltage Supply Source
Single Supply
Voltage - Supply
3.3V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
56-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output High, Low
-
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 1 2 3 4 5 6 7 8 9 0 1 2
1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 0 1 2 1 2 3 4 5 6 7 8 9 0 1 2
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Notes:
1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. Measured by the voltage drop between A and B pins at indicated current through the switch. ON resistance is determined by the
Capacitance
Notes:
1. This parameter is determined by device characterization but is not production tested.
DC Electrical Characteristics
Parameters Description
Storage Temperature............................................................ –65°C to +150°C
Ambient Temperature with Power Applied ............................. –40°C to +85°C
Supply Voltage to Ground Potential ........................................ –0.3V to +4.6V
DC Input Voltage ..................................................................... –0.5V to +4.6V
DC Output Current ............................................................................... 120mA
Power Dissipation ................................................................................... 0.5W
Parameters
lower of the voltages on the two (A & B) pins.
V
V
I
I
I
V
R
IH
IL
OZH
ON
IH
IL
IK
C
C
C
C
OFF
OFF
06-0244
IN
ON
(3)
(1)
Input HIGH Voltage
Input LOW Voltage
Input HIGH Current
Input LOW Current
High Impedance Output Current A = 0V or V
Clamp Diode Voltage
Switch On Resistance
(T
A
= 25°C, f = 1 MHz)
Description
Input Capacitance
A Capacitance, Switch Off
B Capacitance, Switch Off
A/B Capacitance, Switch On
CC
= 3.3V, T
A
(4)
= 25°C ambient and maximum loading.
(Over the Operating Range, T
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
V
V
V
I
V
I
ON
ON
CC
CC
CC
CC
CC
= 48mA
= 15mA
= Max., V
= Max., V
= Min., V
= Min., V
= Min., I
CC
IN
max., VBIAS1 = VBIAS2 = V
Test Conditions
IN
IN
IN
IN
= –18mA
= 0.0V,
= 2.4V,
A
2
= GND
= V
= –40°C to +85°C, V
Test Conditions
CC
V
V
V
V
3.3V, Low Capacitance 16-Bit to 32-Bit, DeMux
IN
IN
IN
IN
= 0V
= 0V
= 0V
= 0V
(1)
Note: Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the
operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for ex-
tended periods may affect reliability.
NanoSwitch™ with Precharged Outputs
CC
= 3.3V ±10%, VBIAS = 1.3V to V
CC
max.
Typ.
2.6
8.0
4.2
11
Min.
–0.5
2.0
Typ.
–0.9
Max.
3.2
9.5
4.7
14
5
9
(2)
Max.
–1.8
0.8
PS8420F
±1
±1
+1
15
PI3B32160
7
Units
CC
pF
pF
pF
pF
)
Units
μA
05/09/06
Ω
V
V

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