BYQ28E-200-E3 Vishay, BYQ28E-200-E3 Datasheet - Page 3

• Manufacturer Part Number: BYQ28E-200-E3
• Description: Semiconductors and Actives, Power Diodes, Discretes (diodes, transistors, thyristors ...), Diodes
• Manufacturer: Vishay

Document Number 88549
22-Aug-06
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
1000
0.01
100
100
1.0
1.0
0.1
0.1
10
Figure 4. Typical Reverse Characteristics Per Diode
10
0.2
0
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
20
0.4
Instantaneous Forward Voltage (V)
T
BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT thru UG(F,B)10DCT
j
= 125 °C
0.6
40
T
T
j
T
j
= 25 °C
= 125 °C
j
0.8
= 100 °C
T
j
= 25 °C
60
T
j
= 100 °C
1.0
80
1.2
100
1.4
100
Figure 5. Reverse Switching Characteristics Per Diode
10
50
40
30
20
10
1
0
Figure 6. Typical Junction Capacitance Per Diode
0.1
25
at 1 A, 100 A/µs
Vishay General Semiconductor
at 5 A, 50 A/µs
at 2 A, 20 A/µs
at 2 A, 20 A/µs
50
Junction Temperature (°C)
Reverse Voltage (V)
1
at 5 A, 50 A/µs
at 1 A, 100 A/µs
75
10
T
f = 1.0 MHz
V
j
sig
100
= 125 °C
= 50 mVp-p
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t
Q
rr
rr
125
100
3