2SC2240-GR(F) Toshiba, 2SC2240-GR(F) Datasheet

2SC2240-GR(F)

Manufacturer Part Number

2SC2240-GR(F)

Description

Semi, Discrete, Transistor

Manufacturer

Toshiba

Datasheet

1.2SC2240-GRF.pdf (2 pages)

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Low Noise Audio Amplifier Applications

applications. This device is designed to lower noise figure in the region of

low signal source impedance, and to lower the pulse noise. This is

recommended for the first stages of Equalizer amplifiers.

Maximum Ratings

The 2SC2240 is a transistor for low frequency and low noise

Low noise : NF = 4dB (typ.) R

Low pulse noise: Low 1/f noise

High DC current gain: h

High breakdown voltage: V

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature range

: NF = 0.5dB (typ.) R

Characteristics

f = 1 kHz

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

(Ta = = = = 25°C)

CEO

= 200~700

= 100 Ω, V

= 120 V

= 1 kΩ, V

Symbol

CBO

CEO

EBO

stg

2SC2240

= 6 V, I

-55~125

Rating

120

100

300

125

= 100 µA,

Unit

°C

Weight: 0.21 g (typ.)

JEDEC

JEITA

TOSHIBA

2-5F1B

TO-92

SC-43

2SC2240

Unit: mm

Related parts for 2SC2240-GR(F)

2SC2240-GR(F) Summary of contents

Page 1

... TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplifiers ...

Page 2

... 0 0.1 mA kHz 0.1 mA kHz 100 2SC2240 Min Typ. Max Unit ¾ ¾ mA 0.1 ¾ ¾ mA 0.1 ¾ ¾ 120 V ¾ 200 700 ¾ ¾ 0.3 V ¾ ¾ ...

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