BC856B/E9 Vishay, BC856B/E9 Datasheet - Page 6

• Manufacturer Part Number: BC856B/E9
• Description: Semiconductors and Actives, pnp, transistor, Discretes (diodes, transistors, thyristors ...), plastic
• Manufacturer: Vishay

BC856 to BC859
Vishay Semiconductors
www.vishay.com
6
Figure 4. Collector-Base Cutoff Curent vs. Ambient Temperature
19183
-I CBO
19197
h FE
19184
-I
C
10
10
mA
Figure 5. Collector Current vs. Base-Emitter Voltage
10
10
10
10
10
10
10
10
10
nA
-1
1
2
1
1
Figure 3. DC Current Gain vs. Collector Current
-1
3
2
3
2
0
4
0
10
-V
-2
100 °C
-V
CE
T
amb
CE
= 5 V
= 5 V
= 25 °C
T
10
amb
-1
= 25 °C
- 50 °C
test voltage - V
equal to the given
maximum value - V
0.5
100
1
-V BE
-I C
typical
maximum
T j
CBO
10
CEO
:
200 °C
1 V
10
2
Figure 7. Collector Base Capacitance, Emitter base Capacitance
C CBO
C EBO
19188
-V CEsat
19186
19187
Figure 6. Collector Saturation Voltage vs. Collector Current
10
Figure 8. Relative h-Parameters vs. Collector Current
10
0.2
0.5
0.3
0.1
0.4
10
10
V
20
pF
0
1
-1
2
0
10 -1
10
0.1
T
-1
-I /-I = 20
amb
C B
-V
T
amb
CE
= 25 °C
h fe
C CBO
= 25 °C
= 5 V
h oe
h ie
T
amb
h re
vs. Bias Voltage
1
= 100 °C
C EBO
1
1
-I C
-I C
-V CBO,
Document Number 85135
10
Rev. 1.2, 08-Sep-04
-V EBO
-50 °C
25 °C
VISHAY
10 mA
10
10 V
2
mA