MW4IC915GNBR1_06 FREESCALE [Freescale Semiconductor, Inc], MW4IC915GNBR1_06 Datasheet - Page 3

• Manufacturer Part Number: MW4IC915GNBR1_06
• Description: RF LDMOS Wideband Integrated Power Amplifiers
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical Performances (In Freescale Reference Board) V
Typical GSM/GSM EDGE Performances (In Freescale Reference Board) V
869 MHz<Frequency<960 MHz
1. Refer to AN1977/D, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf.
Quiescent Current Accuracy over Temperature
Gain Flatness in 40 MHz Bandwidth @ P
Deviation from Linear Phase in 40 MHz Bandwidth @ P
Delay @ P
Part - to - Part Phase Variation @ P
Output Power, 1dB Compression Point
Power Gain @ P
Power Added Efficiency @ P
Input Return Loss @ P
Error Vector Magnitude @ P
Spectral Regrowth at 400 kHz Offset @ P
Spectral Regrowth at 600 kHz Offset @ P
with 1.8 kΩ Gate Feed Resistors ( - 10 to 85°C)
0.6% rms source EVM
Select Documentation/Application Notes - AN1977.
out
= 3 W CW Including Output Matching
out
= 15 W CW
out
= 15 W CW
out
Characteristic
out
= 3 W Avg. including
= 15 W CW
out
= 3 W CW
(T
out
out
out
C
= 25°C unless otherwise noted)
= 3 W CW
= 3 W Avg.
= 3 W Avg.
(1)
out
DS
= 3 W CW
= 26 V, I
DQ1
= 60 mA, I
DS
(continued )
Symbol
= 26 V, I
Delay
P1dB
ΔI
EVM
PAE
SR1
SR2
G
IRL
G
ΔΦ
Φ
QT
ps
F
DQ2
DQ1
= 240 mA, 869 MHz<Frequency>960 MHz
= 60 mA, I
Min
—
—
—
—
—
—
—
—
—
—
—
—
MW4IC915NBR1 MW4IC915GNBR1
DQ2
= 240 mA,
±0.6
Typ
±15
- 15
- 65
- 83
0.2
2.5
1.5
±5
20
30
44
Max
—
—
—
—
—
—
—
—
—
—
—
—
% rms
Watts
Unit
dBc
dBc
dB
dB
dB
ns
%
%
°
°
3