BAR63V-03-GS18 VISHAY [Vishay Siliconix], BAR63V-03-GS18 Datasheet
BAR63V-03-GS18
Related parts for BAR63V-03-GS18
BAR63V-03-GS18 Summary of contents
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... Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications For frequency GHz RF-signal tuning Mobile, wireless and TV-Applications Parts Table Part BAR63V-03 BAR63V-03-GS18 or BAR63V-03-GS08 Absolute Maximum Ratings °C, unless otherwise specified amb Parameter Reverse voltage Forward current Junction temperature ...
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... BAR63V-03 Vishay Semiconductors Parameter Forward resistance f = 100 MHz 100 MHz 100 MHz, I Charge carrier life time mA Typical Characteristics (Tamb = 25 °C unless otherwise specified) Figure 1. Forward Resistance vs. Forward Current 0. MHz 0.25 0.20 0.15 0.10 0.05 0. Reverse V oltage (V) 18333 R Figure 2. Diode Capacitance vs. Reverse Voltage www ...
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... Figure 5. Typical Charge Recovery Curve Package Dimensions in mm (Inches) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 3.1 (.122) 2.8 (.110) 0.4 (.016 0.95 (.037) 0.95 (.037) Document Number 85749 Rev. 1.4, 15-Apr-05 200 0.175 (.007) 0.098 (.005) 2.6 (.102) 2.35 (.092) 0.52 (0.020) 2.0 (0.079) 0.95 (0.037) BAR63V-03 Vishay Semiconductors ISO Method E 0.9 (0.035) 0.95 (0.037) 17418 www.vishay.com 3 ...
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... BAR63V-03 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...