Q67000-S200 SIEMENS [Siemens Semiconductor Group], Q67000-S200 Datasheet
Q67000-S200
Related parts for Q67000-S200
Q67000-S200 Summary of contents
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... N channel • Enhancement mode • Avalanche rated • 2.1 ... 4.0 V GS(th) Type V DS BSP 298 400 V Type Ordering Code BSP 298 Q67000-S200 Maximum Ratings Parameter Continuous drain current ° drain current, pulsed °C A Avalanche energy, single pulse ...
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Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C A Inverse diode direct current,pulsed °C A Inverse diode forward voltage ...
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Power dissipation tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I = parameter : ...
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Typ. output characteristics parameter µ ° 1 tot 1.0 I ...
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Drain-source on-resistance (on) j parameter 0 7.5 6.5 R 6.0 DS (on) 5.5 5.0 4.5 4.0 98% 3.5 3.0 typ 2.5 2.0 1.5 1.0 0.5 ...
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Avalanche energy parameter 1. 125 mH GS 140 mJ 120 E 110 AS 100 ...
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Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 BSP 298 Sep-12-1996 ...