SWC1N60C SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.], SWC1N60C Datasheet
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SWC1N60C
Related parts for SWC1N60C
SWC1N60C Summary of contents
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SAMWIN Features ■ High ruggedness (Max 9 Ω)@V ■ R =10V DS(ON) GS ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This ...
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SAMWIN Electrical characteristic ( Symbol Parameter Off characteristics BV Drain to source breakdown voltage DSS I Drain to source leakage current DSS Gate to source leakage current, forward I GSS Gate to source leakage current, reverse ...
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SAMWIN Fig. 1. On-state characteristics V GS Top : 15.0 V 10.0 V 8 6.5 V 6.0 V Bottom : 5 Drain-Source Voltage [V] ...
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SAMWIN Fig 7. Breakdown Voltage Variation vs. Junction Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Fig. 9. Maximum drain current vs. case temperature. 1.00 0.75 0.50 0.25 0. ...
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SAMWIN Fig. 12. Gate charge test circuit & waveform Same type as DUT V GS 1mA Fig. 13. Switching time test circuit & waveform 10V IN Fig. 14. Unclamped Inductive switching test circuit & waveform I ...
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SAMWIN Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT Same type 10V GS as DUT *. dv/dt controlled controlled by pulse period Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All ...
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SAMWIN REVISION HISTORY Revision No. Changed Characteristics REV 1.0 Origination, First Release Updated the format of datasheet and added REV 2.0 Order Codes. WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 地址:西安市高新区高新一路25号创新大厦MF6 电话:029 - 88253717 传真:029 - 88251977 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights ...