XR1007_0610 MIMIX [Mimix Broadband], XR1007_0610 Datasheet - Page 5
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XR1007_0610
Manufacturer Part Number
XR1007_0610
Description
11.0-17.0 GHz GaAs MMIC Receiver
Manufacturer
MIMIX [Mimix Broadband]
Datasheet
1.XR1007_0610.pdf
(8 pages)
Typical Application
11.0-17.0 GHz GaAs MMIC
Receiver
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1=4.0V with Id1=80mA and
Vd3=4.0V with Id3=100mA. Additionally, a mixer bias is also required with Vg4=-0.5V. Adjusting Vg4 above or below this value can adversely
affect conversion gain, image rejection and intercept point performance. It is also recommended to use active biasing to keep the currents
constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the
power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in
series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain
voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage.
Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if
gate or drains are tied together) of DC bias pads.
For Individual Stage Bias -- Each DC pad (Vd1,3 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as
possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF
Mimix Broadband's 11.0-17.0 GHz GaAs MMIC Receiver can be used in saturated radio applications and linear modulation schemes up to
128 QAM. The receiver can be used in upper and lower sideband applications from 11.0-17.0 GHz.
October 2006 - Rev 13-Oct-06
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
MTTF is calculated from accelerated life-time data of single devices and assumes isothermal back-plate.
11.0-17.0 GHz
RF IN
1.0E+06
1.0E+05
1.0E+04
1.0E+03
1.0E+02
1.0E+01
1.0E+00
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Mimix Broadband MMIC-based 11.0-17.0 GHz Receiver Block Diagram
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Bias Conditions: Vd1=4.0V, Id1=80mA, Vd3=4.0V, Id3=100 mA
55
9.0-15.0 GHz (USB Operation)
13.0-19.0 GHz (LSB Operation)
LO(+3.0dBm)
their obligation to be compliant with U.S. Export Laws.
XR1007
XR1007, MTTF (yrs) vs. Backplate Temperature (°C)
LNA
65
IR Mixer
Temperature (°C)
Buffer
75
Coupler
85
BPF
AGC Control
95
IF Out
2 GHz
R1007
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