TLP181_02 TOSHIBA [Toshiba Semiconductor], TLP181_02 Datasheet - Page 4

• Manufacturer Part Number: TLP181_02
• Description: GaAs Ired and Photo−Transistor
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Individual Electrical Characteristics
Coupled Electrical Characteristics
Isolation Characteristics
Current transfer ratio
Saturated CTR
Collector-emitter
saturation voltage
Off-state collector current
Capacitance
(input to output)
Isolation resistance
Isolation voltage
Forward voltage
Reverse current
Capacitance
Collector-emitter
breakdown voltage
Emitter-collector
breakdown voltage
Collector dark current
Capacitance
(collector to emitter)
Characteristic
Characteristic
Characteristic
(Ta = 25°C)
V
V
I
C
V
Symbol
Symbol
Symbol
(BR) CEO
(BR) ECO
I
I
CE (sat)
I
/ I
C (off)
C
C
BV
CEO
V
C
C
R
I
CE
R
F (sat)
/ I
F
T
S
S
(Ta = 25°C)
S
F
(Ta = 25°C)
I
V
V = 0, f = 1 MHz
I
I
V
below 1000 lx)
V
light below 1000 lx)
V = 0, f = 1 MHz
I
IF = 1 mA, V
I
I
V
V
V
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
F
C
E
F
C
C
R
CE
CE
F
S
S
= 10 mA
= 0.1 mA
= 5 mA, V
= 0.5 mA
= 2.4 mA, I
= 0.2 mA, I
= 0.7V, V
= 0V, f = 1 MHz
= 500 V, R.H. ≤ 60%
4
= 5 V
= 48 V, ( Ambient light
= 48 V, Ta = 85°C, ( Ambient
Test Condition
Test Condition
Test Condition
CE
CE
CE
F
F
= 8 mA
= 1 mA
= 5 V
= 0.4 V
= 48 V
Rank GB
Rank GB
Rank GB
1×10
3750
Min.
MIn.
Min.
100
1.0
80
50
30
—
—
—
—
—
—
—
—
—
—
—
—
—
7
12
10000
10000
Typ.
1.15
0.01
Typ.
Typ.
10
0.2
0.8
30
(2)
(4)
10
60
—
—
—
—
—
—
—
—
—
2
1
14
2002-09-25
Max.
Max.
Max.
(10)
(50)
600
600
1.3
0.1
0.4
0.4
10
50
10
—
—
—
—
—
—
—
—
—
—
—
—
TLP181
V
Unit
Unit
Unit
V
µA
pF
µA
µA
pF
µA
pF
%
%
Ω
rms
V
V
V
V
dc