K9K1G08R0B SAMSUNG [Samsung semiconductor], K9K1G08R0B Datasheet - Page 10

• Manufacturer Part Number: K9K1G08R0B
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

DC AND OPERATING CHARACTERISTICS
NOTE : V
Valid Block
NOTE :
1. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
3. Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.
K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
Stand-by Current
Stand-by Current
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All
inputs
Output High Voltage
Level
Output Low Voltage
Level
Output Low Current
Operating
Valid Block Number
Current
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not try to access these
invalid blocks for program and erase. Refer to the attached technical notes for an appropriate management of invalid blocks.
cycles.
Parameter
IL
can undershoot to -0.4V and V
Parameter
Sequential
Read
Program
Erase
(TTL)
(CMOS)
(R/B)
Symbol
I
OL
I
I
I
I
I
V
V
V
V
CC
CC
CC
SB
SB
I
(R/B)
I
LO
OH
LI
IH*
IL*
OL
1
2
3
1
2
tRC=50ns
(K9K1G08R0B:60ns), CE=V
I
CE=V
CE=V
V
V
I/O pins
Except I/O pins
K9K1G08R0B :I
K9K1G08B0B :I
K9K1G08U0B :I
K9K1G08R0B :I
K9K1G08B0B :I
K9K1G08U0B :I
K9K1G08R0B :V
K9K1G08B0B :V
K9K1G08U0B :V
OUT
IH
IN
OUT
=0 to Vcc(max)
can overshoot to V
=0mA
Symbol
=0 to Vcc(max)
IH
CC
N
Test Conditions
, WP=0V/V
VB
-0.2, WP=0V/V
-
-
-
OH
OH
OH
OH
OL
OL
OL
OL
OL
=100uA
=2.1mA
-100µA
-100µA
-400µA
=100µA
CC
=0.1V
=0.1V
=0.4V
CC
+0.4V for durations of 20 ns or less
CC
8,052
(Recommended operating conditions otherwise noted.)
Min
IL
10
V
V
V
Min
-0.4
-0.3
-
0.4
0.1
CCQ
CCQ
CC
3
-
-
-
-
-
-
-
-
-
1.8V
Typ
10
10
10
20
4
-
-
-
-
-
-
-
-
V
Typ.
Max
+0.3
+0.3
100
V
±20
±20
0.4
0.1
20
20
20
CCQ
1
CC
-
-
-
V
V
Min
-0.4
V
-0.4
-0.3
-0.4
CCQ
CCQ
K9K1G08X0B
3
CC
-
-
-
-
-
-
-
-
2.7V
Typ
10
10
10
10
4
-
-
-
-
-
-
-
-
FLASH MEMORY
8,192
Max
V
Max
+0.3
+0.3
V
±10
±10
0.5
0.4
20
20
20
50
CCQ
1
CC
-
-
Min Typ
-0.3
2.0
2.0
2.4
8
-
-
-
-
-
-
-
-
3.3V
15
15
15
20
10
Advance
-
-
-
-
-
-
-
-
Blocks
V
V
Unit
Max
+0.3
100
±20
±20
0.3
0.8
0.4
30
30
30
CC
CCQ
1
-
-
+
Unit
mA
mA
µA
V