ON1114 PANASONIC [Panasonic Semiconductor], ON1114 Datasheet
ON1114
Manufacturer Part Number
ON1114
Description
Photo lnterrupter For contactless SW, object detection
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.ON1114.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ON1114
Manufacturer:
LITON
Quantity:
2 100
Transmissive Photosensors (Photo lnterrupters)
CNA1012K
Photo lnterrupter
For contactless SW, object detection
■ Overview
infrared light emitting diode is used as the light emitting element, and
a high sensitivity phototransistor is used as the light detecting ele-
ment. The two elements are arranged so as to face each other, and
objects passing between them are detected.
■ Features
■ Absolute Maximum Ratings T
■ Electrical-Optical Characteristics T
Note) 1. Input and output are practiced by electricity.
Publication date: April 2004
• Highly precise position detection: 0.3 mm
• Wide gap between emitting and detecting elements, suitable for
• Fast response: t
• Small output current variation against change in temperature
• Large output current
Input (Light
emitting diode) Forward current
Output (Photo Collector-emitter voltage
transistor)
Temperature
Input
characteristics Reverse current
Output
characteristics (Base open)
Transfer
characteristics Collector-emitter saturation voltage V
CNA1012K is a photocoupler in which a high efficiency GaAs
thick plate detection
2. This device is designed be disregarded radiation.
3. * : Switching time measurement circuit
50Ω
Forward voltage
Collector-emitter cutoff current
Collector-emitter capacitance
Collector current
Rise time
Fall time
Parameter
Parameter
Reverse voltage
Power dissipation
(Base open)
Emitter-collector voltage
(Base open)
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Sig. in
r
, t
*
*
f
= 6 µs (typ.)
V
R
CC
L
Sig. out
* 1
(ON1114)
* 2
Symbol
Symbol
a
(Input pulse)
(Output pulse)
V
V
I
T
T
CE(sat)
= 25°C
V
V
C
P
P
CEO
I
I
I
I
CEO
ECO
t
t
opr
C
stg
R
C
F
D
C
r
f
R
C
F
a
−30 to +100
= 25°C ± 3°C
−25 to +85
I
V
V
V
V
I
V
R
F
F
Rating
L
Note) The part number in the parenthesis shows conventional part number.
R
CE
CE
CE
CC
= 50 mA
= 50 mA, I
100
= 100 Ω
= 3 V
t
SHG00019BED
50
75
30
20
r
3
5
= 10 V
= 10 V, f = 1 MHz
= 10 V, I
= 10 V, I
C
F
C
Conditions
Unit
t
mW
mW
mA
mA
f
= 0.1 mA
°C
°C
= 20 mA
= 1 mA
V
V
V
90%
10%
t
t
r
f
Note) * 1: Input power derating ratio is 1.0 mW/°C at
: Rise time
: Fall time
* 2: Output power derating ratio is 1.34 mW/°C
(Note) ( ) Dimension is reference
T
at T
a
≥ 25°C.
a
Mark for indicating
≥ 25°C.
2
1
A
13.0
5.0
A'
(10.0)
Min
LED side
0.7
±0.2
±0.3
0.45
2-R0.5
2-0.45
3
4
±0.1
Typ
1.2
5
6
6
PISTR104-013 Package
±0.2
(2.54)
SEC. A-A'
Max
200
1.5
0.3
10
1: Anode
2: Cathode
3: Collector
4: Emitter
0.45
Unit: mm
Device
±0.1
center
Unit
mA
µA
nA
pF
µs
µs
V
V
1
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ON1114 Summary of contents
Page 1
... Transmissive Photosensors (Photo lnterrupters) CNA1012K (ON1114) Photo lnterrupter For contactless SW, object detection ■ Overview CNA1012K is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting ele- ment. The two elements are arranged face each other, and objects passing between them are detected. ■ ...
Page 2
CNA1012K − Ambient temperature T (° 1 ...
Page 3
Caution for Safety DANGER Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any ...