D1008-QH MIMIX [Mimix Broadband], D1008-QH Datasheet - Page 7

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D1008-QH

Manufacturer Part Number
D1008-QH
Description
30.0 kHz-32.0 GHz GaAs MMIC
Manufacturer
MIMIX [Mimix Broadband]
Datasheet
30.0 kHz-32.0 GHz GaAs MMIC
Distributed QFN Packaged Amplifier
App Note [1] Biasing - As shown in functional schematic, the device is operated by typically biasing the drain with 4.0
to 7.0 V and 160 to 200 mA through a bias tee at RFout. The drain current is controlled by the gate bias at VG1 which is
typically at -2.5 V for normal operation. It is recommended to use active bias to keep the currents constant in order to
maintain the best performance over temperature. Depending on the supply voltage available and the power dissipatior
constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in
series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain
current and thus drain voltage. The typical gate voltage needed to do this is -2.5V. Make sure to sequence the applied
voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement - Each DC pin (Vd and Vg) needs to have DC bypass capacitance (100pF/10nF/1uF) as
close to the package as possible.
MTTF
December 2009 - Rev 08-Dec-09
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
1.0E+14
1.0E+13
1.0E+12
1.0E+11
1.0E+10
1.0E+09
1.0E 09
1.0E+08
1.0E+07
1.0E+06
1.0E+05
1.0E+04
20
XD1008-QH: MTTF (hours) at Vd=7V, 200mA
30
Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
40
50
Backplate Temp (
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
60
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
70
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
1
0
80
25
their obligation to be compliant with U.S. Export Laws.
o
C)
90
XD1008-QH: Operating Power De-rating Curve
100 110 120
50
Backplate Temp (
75
200
180
160
140
120
100
100
80
60
40
20
100
0
20
o
C)
30
XD1008-QH: Max. Tch (ºC) at Vd=7V, 200mA
125
40
50
Backplate Temp (
150
60
70
80
o
C)
D1008-QH
90
100 110 120
Page 7 of 9

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