F2002 Polyfet RF Devices, F2002 Datasheet - Page 2
F2002
Manufacturer Part Number
F2002
Description
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Manufacturer
Polyfet RF Devices
Datasheet
1.F2002.pdf
(2 pages)
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
9
8
7
6
5
4
3
2
1
0
2.5
1.5
0.5
3
2
1
0
0
0
S11 AND S22 SMITH CHART
VGS = 2V
F2002 POUT VS PIN FREQ=1000 MHZ; IDQ=0.4A; VDS=28V
2
GAIN
POUT
0.5
4
VGS = 4V
POUT VS PIN GRAPH
6
1
IV CURVE
F2A 2 DIE IV CURVE
VGS = 6V
Efficiency = 40%
PIN IN WATTS
8
POUT
VDS IN VOLTS
10
1.5
GAIN
VGS = 8V
12
14
VGS = 10V
2
16
18
POLYFET RF DEVICES
VGS 12V
2.5
13
12
11
10
9
8
7
6
5
20
F2002
100
0.01
10
0.1
10
1
1
0
0
PACKAGE DIMENSIONS IN INCHES
2
CAPACITANCE VS VOLTAGE
5
Coss
Crss
4
10
ID AND GM VS VGS
6
F2A 2 DIE GM & ID vs VGS
F2A 2 DIE CAPACITANCE
Ciss
VDS IN VOLTS
Vgs in Volts
8
Gm
15
Id
10
REVISION 8/1/97
20
12
14
25
16
30
18