MX29LAA641D MCNIX [Macronix International], MX29LAA641D Datasheet - Page 2

• Manufacturer Part Number: MX29LAA641D
• Description: 64M-BIT [4M x 16/8M x 8] CMOS EQUAL SECTOR
• Manufacturer: MCNIX [Macronix International]

• Secured Silicon Sector
PACKAGE
• 64-ball BGA
• All Pb-free devices are RoHS Compliant
GENERAL DESCRIPTION
MX29LA641D H/L is a 64Mbit flash memory that can be organized as 8Mbytes of 8 bits each or as 4Mbytes of 16 bits
each. These devices operate over a voltage range of 2.7V to 3.6V typically using a 3V power supply input. The memory
array is divided into 128 equal 64 Kilo byte blocks.
The MX29LA641D H/L is offered in a 64-ball BGA(LFBGA) JEDEC standard package. The package is offered in leaded,
as well as lead-free version that is compliant to the RoHS specifications. The software algorithm used for this device
also adheres to the JEDEC standard for single power supply devices. These flash parts can be programmed in system
or on commercially available EPROM/Flash programmers.
Separate OE# and CEx (Output Enable and Chip Enable) signals are provided to simplify system design. When used
with high speed processors, the 90ns read access time of this flash memory permits operation with minimal time lost
due to system timing delays.
The automatic write algorithm provided on Macronix flash memories perform an automatic erase prior to write. The user
only needs to provide a write command to the command register. The on-chip state machine automatically controls the
program and erase functions including all necessary internal timings. Since erase and write operations take much
longer time than read operations, erase/write can be interrupted to perform read operations in other sectors of the
device. For this, Erase Suspend operation along with Erase Resume operation are provided. Data# polling or Toggle
bits are used to indicate the end of the erase/write operation.
The device is manufactured at the Macronix fabrication facility using the time tested and proven MXIC advanced tech-
nology. This proprietary non-epi process provides a very high degree of latch-up protection for stresses up to 100
milliamperes on address and data pins from -1V to 1.5xVCC.
With low power consumption and enhanced hardware and software features, this flash memory retains data reliably for
at least ten years. Erase and programming functions have been tested to meet a typical specification of 100,000
cycles of operation.
P/N:PM1289
(Please contact Macronix sales for specific information regarding this permanent lock feature)
- Provides a 128-word area for code or data that can be permanently protected
- Once this sector is protected, it is prohibited to program or erase within the sector again
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MX29LA641D H/L
REV. 1.1, JAN. 06, 2009