K9F2808Q0C-HCB0 SAMSUNG [Samsung semiconductor], K9F2808Q0C-HCB0 Datasheet - Page 28

• Manufacturer Part Number: K9F2808Q0C-HCB0
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F2808U0C
BLOCK ERASE
The Erase operation is done on a block basis. Block address loading is accomplished in two cycles initiated by an Erase Setup com-
mand(60h). Only address A
loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that memory
contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When the
erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 11 details the sequence.
Figure 11. Block Erase Operation
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 4 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00h or 50h) should be given before sequential page read cycle.
Table4. Read Status Register Definition
R/B
I/Ox
I/O #
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
60h
14
to
Block Add. : A
Address Input(2Cycle)
A
23
is valid while A
9
Reserved for Future
~ A
Device Operation
Program / Erase
23
Write Protect
9
Status
to A
Use
13
D0h
is ignored. The Erase Confirm command(D0h) following the block address
28
t
BERS
"0" : Successful Program / Erase
"1" : Error in Program / Erase
"0"
"0"
"0"
"0"
"0"
"0" : Busy
"0" : Protected
70h
Definition
FLASH MEMORY
"1" : Not Protected
"1" : Ready
I/O
Fail
0
Pass